Epitaxial Growth of Conductive LaNiO3 Thin Films by Pulsed Laser Ablation

T Yu,YF Chen,ZG Liu,XY Chen,L Sun,NB Ming,LJ Shi
DOI: https://doi.org/10.1016/0167-577x(95)00199-9
IF: 3
1996-01-01
Materials Letters
Abstract:Epitaxial LaNiO3 (LNO) thin films have been fabricated on (001)SrTiO3 and (001)LaAlO3 single crystal substrates by pulsed laser ablation at 30 Pa oxygen partial pressure and 700 °C substrate temperature. X-ray θ–2θ scan, X-ray Φ scan, Rutherford backscattering (RBS) channeling and electron probe technique were used to characterize the as-deposited LNO thin films. The surface of the epitaxial LNO thin film was analyzed by X-ray photoelectron spectroscopy (XPS). Down to 80 K, the epitaxial LNO thin film showed good metallic behavior and its resistivity was 2.5 × 10−6 Ω m at 300 K.
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