Abstract:LiNbO3 waveguiding films with highly C-axis orientation and superior crystallographic quality have been deposited on the amorphous SiO2 buffer layer of Si wafer by pulsed laser deposition (PLD) technique. X-ray diffraction, high-resolution electron transmission microscopy and atomic force microscopy were applied to characterizing the quality and orientation of LiNbO3 thin film, and the optimized deposition conditions have been determined for C-axis oriented growth. LiNbO3 thin films on amorphous SiO2 buffer layer were composed of intimate arrangements of quadrangular single crystal domain (150 nm × 150 nm) with C-axis orientation, and displayed sharp interface structures. The measurements of prism coupling technique indicate that the laser can be coupled into the LiNbO3 film and TE and TM waveguiding modes were detected. In addition, the possible mechanism of oriented growth on amorphous buffer layer and “film-substrate effects” were discussed briefly, which suggests that its growth mechanism is likely analogous to the Volmer model with characteristics of three-dimensional islands nucleation on the smooth crystal surface.

Pulsed Laser Deposition of (001) Textured LiNbO3 Films on Al2O3/SiO2/Si Substrate

Growth of textured LiNbO3 thin film on Si (111) substrate by pulsed laser deposition

(012) Textured LiNbO3 Waveguiding Films Grown on SiO2 by Pulsed Laser Deposition Technique

Pulsed Laser Deposition of Optical Waveguiding LiNbO 3 Films on SiO 2 Substrate

Microstructure of LiNbO3 Thin Films Grown on Silicon Substrates by Pulsed Laser Deposition

The role of SiO2 buffer layer in the growth of highly textured LiNbO3 thin film upon SiO2/Si by pulsed laser deposition

Highly C-Axis Oriented LiNbO3 Thin Film Grown on SiO2/Si Substrates by Pulsed Laser Deposition

Optical Waveguide Properties of LiNbO3 Thin Films on Silicon Substrates

Pulsed-Laser Deposition and Optical Properties of Completely (001) Textured Optical Waveguiding Linbo3 Films Upon Sio2/Si Substrates

Pulsed Laser Deposition of Linbo3/Litao3 Multilayer Films on Sio2/Si(100) Substrate

Nonlinear Optical LiNbO3 Films Grown on Α-Sio2 and Α-Al2o3 in Waveguiding Form

Growth and Optical Properties of Completely C-Axis Orientated LiNbO3 Films Deposited by Pulsed Laser Deposition

Effect of growth rate on the characteristics of LiNbO3 waveguide thin films on SiO2/Si substrate by PLD

LiNbO3 Thin Film Prepared by Pulsed Laser Deposition

Pulsed Laser Deposition of C-Oriented Optical Waveguiding Bilayered Films on Silicon Wafers

Pulsed laser deposition of c-orientedLiNbO3LiTaO3 optical waveguiding bilayered films on silicon wafers

Influence of substrate temperature on the growth and optical waveguide properties of oriented LiNbO3 thin films

Low Electric Field Induced (001) Oriented Growth of LiNbO3 Films by Pulsed Laser Ablation

Effect of growth rate on the characteristics of LiNbO_3 waveguide thin films on SiO_2/Si substrate by PLD

Growth and Characterization of LiNbO3 Piezoelectric Films by Pulsed Laser Ablation

Highly C-axis oriented LiNbO3 thin film on amorphous SiO2 buffer layer and its growth mechanism