Abstract:It is relatively easy to obtain highly oriented/textured Ba(ZrxTi1–x)O3 (BZT) films by magnetron sputtering, but it is complicated to control the composition of these sputtered oriented films. Here, a series of BZT ceramic targets with different ingredients (x = 0.05, 0.1, 0.15, 0.2, 0.25, and 0.3) and a BaTiO3 (x = 0) target were fabricated by solid-state sintering. Then, the corresponding BZT thin films were deposited on LaNiO3 (LNO) buffered Pt/Ti/(001)Si substrates adopting radio-frequency magnetron sputtering. Benefit from the prefabricated (001)-LNO buffer layer and optimized BZT film preparation process, all BZT films exhibit highly (00l) preferred orientation. However, the degree of orientation, lattice parameter, dielectric properties, ferroelectric behaviors, and energy-storage characteristics are all highly dependent on the Zr content of BZT films sputtered by targets with the same composition. (00l)-oriented BZT films with relatively low Zr content have a better crystalline structure [narrower full width at half maximum (FWHM), larger grains]. It is also found that the rising of the Zr content in (00l)-oriented BZT films will result in a larger out-of-plane lattice parameter, and these results indicate that the doping amount of Zr will strongly change the heterointerface stress/strain states and the growth mode of the oriented films, and then effectively tailor their electric performances.

Growth of orientation-controlled Pb(Mg,Nb)O 3 -PbTiO 3 thin films on Si(100) by using oriented MgO films as buffers

Crystallographic Orientation Dependence of Dielectric Response in Lead Strontium Titanate Thin Films

Epitaxial Growth and Dielectric Properties of Pb0.4Sr0.6TiO3 Thin Films on (00L)-Oriented Metallic Li0.3Ni0.7O2 Coated MgO Substrates

Effect of Sputtering-Target Composition on the Structure, Dielectric, Ferroelectric, and Energy Storage Properties of Highly (00L)-Oriented Ba(ZrxTi1–x)O3 Films

Structure and Dielectric Properties of Highly (100)-Oriented PST Thin Films Deposited on MgO Substrates

The Orientation-Selective Growth of LaNiO3 Films on Si(100) by Pulsed Laser Deposition Using a MgO Buffer

In-plane Dielectric Properties of Epitaxial 0.65pb(mg1∕3nb2∕3)o3−0.35pbtio3 Thin Films in a Very Wide Frequency Range

Properties of (001)-textured Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>–PbTiO<sub>3</sub> thin films

Orientation of MgO thin films grown by pulsed laser deposition

(001)-Oriented PbTiO3ferroelectric Thin Films Grown on Si by Metal-Organic Chemical Vapour Deposition

Growth of Completely (110)-Oriented Pt Film on Si (100) by Using MgO As a Buffer by Pulsed Laser Deposition

Electro-optic Properties of Epitaxial Sr0.6Ba0.4Nb2O6 Films Grown on MgO Substrates Using LixNi2-xO Buffer Layer

Growth and electrical properties of high‐Curie point rhombohedral Mn‐Pb(In 1/2 Nb 1/2 )O 3 ‐Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 thin films

Orientation selective growth of MgO films on Si (100) by pulsed laser deposition

Structural quality of relaxor-based ferroelectric 〈1 1 1〉 oriented Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 single crystals

Properties of (001)-textured Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 thin films

Preferred Orientation Growth of Ba0.6Sr0.4TiO3 Thin Films with Epitaxial MgO Buffer Layer on Si(100) Substrate

Film Thickness Dependence of Structural and Dielectric Properties of Pb(Mg1/3Nb2/3)O3/BaTiO3/Pt/Ti/SiO2/Si

Interface-mediated Ferroelectricity in PMN-PT/PZT Flexible Bilayer Via Pulsed Laser Deposition

High‐quality ternary relaxor ferroelectric thin films on Si substrates by pulsed laser deposition method

The oriented growth of PbTiO3 thin films deposited by a sol-gel process on substrates without lattice match