Growth and electrical properties of high‐Curie point rhombohedral Mn‐Pb(In 1/2 Nb 1/2 )O 3 ‐Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 thin films

Zihao Li,Yuchun Wang,Yanxue Tang,Xiangyong Zhao,Tao Wang,Zhihua Duan,Feifei Wang,Xiaobing Li,Chung Ming Leung,Bijun Fang
DOI: https://doi.org/10.1111/jace.17456
IF: 4.186
2020-09-19
Journal of the American Ceramic Society
Abstract:<p>High‐quality ternary relaxor ferroelectric (100)‐oriented Mn‐doped 0.36Pb(In<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>‐0.36Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>‐0.28PbTiO<sub>3</sub> (Mn‐PIMNT) thin films were grown on SrRuO<sub>3</sub>‐buffered SrTiO<sub>3</sub> single‐crystal substrate in a wide deposition temperature range of 550‐620 °C by using the pulsed laser deposition method. The phase structure, ferroelectric, dielectric, piezoelectric properties and nanoscale domain evolution were studied. Under the deposition temperature of 620 <sup>o</sup>C, the ferroelectric hysteresis loops and current‐voltage curves showed that the film owned significantly enhanced remnant ferroelectric polarization of 34.5 μC/cm<sup>2</sup> and low leakage current density of 2.7×10<sup>−10</sup> A/cm<sup>2</sup>. Moreover, fingerprint‐type nanosized domain patterns with polydomain structures and well‐defined macroscopic piezoelectric properties with a high normalized strain constant <i>d<sup>*</sup></i><sub>33</sub> of 40 pm/V was obtained. Under <i>in‐situ</i> DC electric field, the domain evolution was investigated and 180° domain reversal was observed through piezoelectric force microscope. These global electrical properties make the current Mn‐PIMNT thin films very promising in piezoelectric MEMS applications.</p>
materials science, ceramics
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