Excellent ferroelectric, piezoelectric, and domain switching performance of Mn-doped Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films optimized by oxygen partial pressure

Zihao Li,Yuchun Wang,Zhihua Duan,Wei Cheng,Xiangyong Zhao,Tao Wang,Feifei Wang
DOI: https://doi.org/10.1007/s00339-022-05948-5
2022-08-19
Applied Physics A: Materials Science and Processing
Abstract:The Mn-doped 0.36Pb(In 1/2 Nb 1/2 )O 3 –0.36Pb(Mg 1/3 Nb 2/3 )O 3 –0.28PbTiO 3 (Mn-PIMNT) thin films were fabricated on the SrRuO 3 -buffered SrTiO 3 substrate by pulsed laser deposition. X-ray diffraction, piezoresponse force microscopy, scanning electron microscopy, dielectric, piezoelectric, and ferroelectric analysis were applied to study the structure and electrical properties of the thin film. Under different oxygen pressures, the crystalline and morphology of the Mn-PIMNT thin films differ greatly due to oxygen vacancy defects, which simultaneously affect the dielectric, ferroelectric and piezoelectric properties. Under moderate oxygen pressure of 15 Pa and 20 Pa, excellent ferroelectric properties with remnant polarization of 23.5 μC/cm 2 and 57.4 μC/cm 2 were obtained at 1 kHz and the thin films exhibited (100)-orientation and pure perovskite structure. The double beam laser interferometry showed that the Mn-PIMNT thin film owned a high macroscopic piezoelectric constant of 34 pm/V@1 kHz. The in-situ piezoelectric force microscope analysis also demonstrated excellent nanoscale piezoelectric response and electric field-induced domain switching behavior. The results demonstrate that the Mn-PIMNT thin film has a promising application in integrated piezoelectric devices.
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