Abstract:Ti, Zr and Hf doped CeO2−δ films with (00l) preferred orientation have been prepared on Ni–W substrates by chemical solution deposition method. The influence of ionic radii of dopants on the epitaxial growth process and oxygen diffusion behavior of Ce0.8M0.2O2−δ (M = Ti, Zr, Hf) films were explored by X-ray diffraction and atomic force microscopy. Since the ionic radii of doping cations of Ti, Zr and Hf are smaller than that of Ce and the lattice parameter of Ni–W substrate is smaller than that of CeO2−δ film, the compressive strain exists primarily in the doped film. The doping cation with small radius leads to the small lattice parameter of CeO2−δ film and small lattice mismatch between Ni–W substrate and epitaxial film. The compressive strain decreases resulting from the elastically lattice deformation in the films, while the compressive strain leads to the increase of the growth rate for CeO2−δ grains. The results show that the doping cation with smaller ionic radius has important influence on the surface roughness and the out-of-plane texture. Moreover, binding energy of dopants and oxygen vacancies, oxygen migration energies and vacancy formation energies are related to the intrinsic oxygen diffusion coefficient of buffer layers. Ionic radius has significant effect on the migration energies of oxygen ions. The Ti doped film shows severe oxygen diffusion due to steric effects. Therefore, the selection of suitable dopants would benefit the improvement of texture and surface morphology as well as the ability against oxygen diffusion of buffer layer.

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Preparation of SrTiO3 Buffer Layers on BaxSr1−xTiO3 Seed Layers Buffered Ni Tapes by Chemical Solution Deposition

Preparation and Crystalline Qualities of SrTiO3 and CeO2 Buffer Layers Fabricated on Ni Substrates Via a Sol–gel Method for YBCO Coated Conductors

EPITAXIAL GROWTH OF <font>SrTiO</font><sub>3</sub> THIN FILMS BY SOL-GEL SYNTHESIS ON <font>LaAlO</font><sub>3</sub> AND <font>Ni</font> SUBSTRATES

Preparation and Characterization of Pb(Zr,Ti)O3 Films on SrTiO3 Substrates

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The Effects of Substrate on the Properties of Sol-Gel Derived TiO2 Films

Preparation PST Thin Films with Homogeneity Buffer Layer by RF Magnetron Sputtering Method

Effect of $\hbox{Y}_{2}\hbox{O}_{3}$ Seed Layer on Epitaxial Growth of Oxide Barrier Layer for YBCO Coated Conductor

Effect of Substrate on Superconducting and Magnetic Properties for the Epitaxial FeSe0.5Te0.5 Thin Films

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Enhanced Dielectric and Piezoelectric Properties in Lead-Free Bi0.5Na0.5TiO3–BaTiO3–SrTiO3 Thin Films with Seed Layer

Effect of PbO seeding layers on the structure and properties of the sol-gel-derived BiScO3-PbTiO3 thin films

Preparation of NiO Buffer Layer by Direct Oxygenation of Ni Tape

Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3

Effect of Dopants on the Epitaxial Growth and Oxygen Diffusion Behaviors of CeO2−δ Buffer Layer for Coated Conductors

A Simple One-Step Heat Treatment Process for Preparing Biaxially Textured Buffer Layers on Rolled Ni Tape for High Tc Coated Conductors’ Application

Preparation of Epitaxial Metallic LaNiO3 Films on SrTiO3 by Metalorganic Decomposition for the Oriented Growth of PbTiO3

Influence of doping and buffer layers on Pb(Zr,Ti)O3 thin films derived from inorganic zirconium precursor

Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method