Abstract:PST thin film doped with Mg was successfully prepared using sol-gel process. The phase structure of the thin film was measured by XRD and the morphology of microstructure of the thin film was observed by SEM. Results showed that the cubic perovskite phase is formed in Mg-doped Pb 0.4 Sr 0.6 Mg x Ti 1-x O 3-x thin film prepared by sol gel process. The clustered crystallites are distributed and embedded in the base matrix of thin f ilm. However, the contents of the perovskite phase was controlled by both Mg dop ing and heat treatment condition due to formation of intrinsic oxygen vacancy in the perovskite phase. The charge balance between the positive from the intrinsi c oxygen vacancy and the negative from Mg substitution for Ti occurs when small amount of Mg is doped in the perovskite phase. The stable perovskite phase forms easily, and the crystallization of the perovskite phase is hence increased with increasing Mg doping up to x=0.01. The distortion of the perovskite phase struc ture would increase with farther increase of Mg doping in the crystallites above about x=0.01 due to the generation of a lot of oxygen vacancies. Henceforth uns table perovskite phase is formed and the crystallization of the film decreases w ith increasing Mg. Thus highest content of the perovskite phase is reached and t he charge balance between positive and negative occurs in the film when Mg dopin g is x=0.01. Furthermore, the formed crystalline phase may decompose with increa sing Mg content and time of heat treatment. So in the case of high Mg doping the higher the content of Mg and the longer the time of heat treatment, the lower t he content of perovskite phase is contained in the film.

Effect of Zn Doping on Structure and Ferroelectric Properties of PST Thin Films Prepared by Sol–gel Method

Effect of Zn-Doping on the Tunable Behavior of (pb0.6sr0.4)tio3 Thin Films

The Effect of Pre-Polarization on Dielectric Tunability of PST Thin Film

Preparation of Dielectric Tunable Zn-Doped PST Thin Films

Effect of Mg Doping on Ferroelectric Pst Thin Films for High Tunable Devices

Structure and Dielectric Properties of Highly (100)-Oriented PST Thin Films Deposited on MgO Substrates

Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films

Effects of Pb(Mn,Nb)O 3 doping on the properties of PZT-based films deposited on silicon substrates

Synthesis and Structure of Sol-Gel Derived Pst/Bi2ti2o7 Composite Thin Films

Formation of Pb0.6sr0.4(Ti0.97mg0.03)O-2.97 Thin Films on Assembled Bottom Electrodes with Titanium Silicide Nanowires

Effects of Lanthanum Doping on the Microstructure and Electrical Properties of Sol–gel Derived Pb1-3x/2Lax(Zr0.5Ti0.5)O3 Thin Films

Effect of La Doping on Tunable Behavior of Sol–gel-Derived PST Thin Film

Effects of Lanthanum Doping on the Preferred Orientation, Phase Structure and Electrical Properties of Sol–gel Derived Pb1–3x/2Lax (zr0.6ti0.4)o3 Thin Films

Enhanced Ferroelectric Properties of 0.95pb(sc0.5ta0.5)o3–0.05pbtio3 Thin Films with Pb(Zr0.52,Ti0.48)O3 Seed Layer

Preparation and Phase Formation of Sol-Gel Derived PST Thin Film Doped with Mg

Combined Effect of Preferential Orientation and Zr/Ti Atomic Ratio on Electrical Properties of Pb(ZrxTi1−x)O3 Thin Films

Effect of Mn Doping on the Properties of Sol-gel Derived Pb0.3Sr0.7TiO3Thin Films

Influence of doping and buffer layers on Pb(Zr,Ti)O3 thin films derived from inorganic zirconium precursor

Structure and electrical properties of PbZrO3 antiferroelectric thin films doped with barium and strontium

The Effect of Tb Doped PbTiO3 Inducing Layer on Texture and Tunable Property of Sol–gel Derived Pb0.4Sr0.6TiO3 Thin Films Grown on ITO/glass Substrate

Synthesis and Structure of Sol-Gel Derived PST/Bi<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> Composite Thin Films