Structure and electrical properties of PbZrO3 antiferroelectric thin films doped with barium and strontium

Xihong Hao,Jiwei Zhai,Jing Zhou,Zhenxing Yue,Jichun Yang,Wenguang Zhao,Shengli An
DOI: https://doi.org/10.1016/j.jallcom.2010.07.200
IF: 6.2
2011-01-01
Journal of Alloys and Compounds
Abstract:In this paper, we report on the structure and electrical properties of lead zirconate (PbZrO 3 ) thin films doped with barium (Ba 2+ ) and strontium (Sr 2+ ) deposited on platinum-buffered silicon substrates by a sol–gel method. Effects of Ba 2+ and Sr 2+ dopants on microstructure and electrical properties of the PbZrO 3 antiferroelectric thin films were investigated in details. X-ray diffraction patterns and scanning electron microscope micrographs illustrated that orientation and surface microstructure of these antiferroelectric films were dopant-dependent. The dielectric measurements showed that Sr 2+ doping stabilized the antiferroelectric phase, while Ba 2+ doping destabilized the antiferroelectric phase. It was also found that fatigue property of the antiferroelectric PbZrO 3 thin films was improved remarkably by the dopants.
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