Abstract:(100) Oriented Pb x Sr1−x TiO3 (PSTO) thin films are prepared on indium tin oxide (ITO)/glass substrates by sol–gel technique while inserting doped PbTiO3 (PTO)-inducing layer in between. The effect of tensile stress in PSTO on tunability and (100) orientation of the thin films was investigated using X-ray diffraction, scanning electron microscopy, transmission electron microscope, and atomic force microscope, respectively. Results show that PSTO thin film deposited on doped PTO has (100) oriented structure while it is randomly oriented when deposited directly on the ITO/glass substrate. Lattice mismatch between PSTO and PTO appears, in which the in-plane lattice constant c is 0.3922–0.3924 nm in the former and 4.02–4.07 nm in the latter, respectively, contributing tensile stress in the PSTO due to different lattice constants between them. The stress in the PSTO thin film is 3.04, 3.15, 3.59 and 4.47 GPa when the doped PTOs are Fe–PTO, Tb–PTO, Co–PTO and Zn–PTO, respectively. The orientation degrees of PSTO thin films are from 89.63, 90.31, 91.92 to 93.29 % with increasing stress of PSTO on Fe–PTO, Tb–PTO, Co–PTO and Zn–PTO, respectively. Tunabilities of the well-oriented PSTO thin films increase in ascending order of 63 < 65 < 69 < 73 % when induced by oriented PTO layers of Fe–PTO, Tb–PTO, Co–PTO and Zn–PTO, respectively, which is in accordance with the degree of (100) orientation appearing in the thin films. The high tunability appears in the PSTO thin film while high (100) orientation is derived from the tensile stress. It is much higher than that of randomly oriented PSTO thin film.

Structure and Tuning Properties of Sol–gel-Derived Pb0.4Sr0.6Zr0.52Ti0.48O3 (PSZT) Thin Films

Strontium-modified lead zirconate titanate thin films for electrically tunable device applications

The Roles of B-Site Ions in Lead Strontium Zirconate Titanate Thin Films for Electrically Tunable Device Applications

Effect of Sputtering-Target Composition on the Structure, Dielectric, Ferroelectric, and Energy Storage Properties of Highly (00L)-Oriented Ba(ZrxTi1–x)O3 Films

Effect of Zn-Doping on the Tunable Behavior of (pb0.6sr0.4)tio3 Thin Films

Structure and Dielectric Properties of Highly (100)-Oriented PST Thin Films Deposited on MgO Substrates

Preparation of Dielectric Tunable Zn-Doped PST Thin Films

Preparation and Characterization of Pb(Zr,Ti)O3 Films on SrTiO3 Substrates

Control of Tensile Stress on Inducing Formation and Tunability of (100) Oriented Pb X Sr1−x TiO3 Thin Films

Effect of La Doping on Tunable Behavior of Sol–gel-Derived PST Thin Film

Preparation of (1− x %)(Na 0.5 Bi 0.5 )TiO 3 – x %SrTiO 3 thin films by a sol–gel method for dielectric tunable applications

Preparation of (1− <i>x</i> %)(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub>– <i>x</i> %SrTiO<sub>3</sub> thin films by a sol–gel method for dielectric tunable applications

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Tunable dielectric properties of sol–gel derived (Pb0.35, Sr0.65) (Zr0.5, Ti0.5)O3 thin films for microwave application

Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method

Study of structural and dielectric properties of Ba0.6Sr 0.4(ZrXTi1-X)O3 ceramic

Structural characterization and optical properties of Sol-gel-derived polycrystalline Pb(Zr 0.35 Ti 0.65 )O 3 thin films

Enhanced Fatigue-Endurance of Ferroelectric Pb1−xSrx(Zr0.52Ti0.48)O3 Thin Films Prepared by Sol-Gel Method

Dielectric and piezoelectric properties of the Ba0.92Ca 0.08Ti0.95Zr0.05O3 thin films grown on different substrate

Enhanced Tunability Performance of Low Temperature Crystallized Pb0.4sr0.6tio3 Thin Films Derived from Distinct Microstructure

Strain-assisted control of high stable dielectric tunability in (100) oriented (Pb,Sr)TiO3 thin films