Abstract:It is relatively easy to obtain highly oriented/textured Ba(ZrxTi1–x)O3 (BZT) films by magnetron sputtering, but it is complicated to control the composition of these sputtered oriented films. Here, a series of BZT ceramic targets with different ingredients (x = 0.05, 0.1, 0.15, 0.2, 0.25, and 0.3) and a BaTiO3 (x = 0) target were fabricated by solid-state sintering. Then, the corresponding BZT thin films were deposited on LaNiO3 (LNO) buffered Pt/Ti/(001)Si substrates adopting radio-frequency magnetron sputtering. Benefit from the prefabricated (001)-LNO buffer layer and optimized BZT film preparation process, all BZT films exhibit highly (00l) preferred orientation. However, the degree of orientation, lattice parameter, dielectric properties, ferroelectric behaviors, and energy-storage characteristics are all highly dependent on the Zr content of BZT films sputtered by targets with the same composition. (00l)-oriented BZT films with relatively low Zr content have a better crystalline structure [narrower full width at half maximum (FWHM), larger grains]. It is also found that the rising of the Zr content in (00l)-oriented BZT films will result in a larger out-of-plane lattice parameter, and these results indicate that the doping amount of Zr will strongly change the heterointerface stress/strain states and the growth mode of the oriented films, and then effectively tailor their electric performances.

Dielectric and piezoelectric properties of the Ba0.92Ca 0.08Ti0.95Zr0.05O3 thin films grown on different substrate

Effect of Sputtering-Target Composition on the Structure, Dielectric, Ferroelectric, and Energy Storage Properties of Highly (00L)-Oriented Ba(ZrxTi1–x)O3 Films

Orientation dependence of the dielectric and piezoelectric properties for the Ba 0.98 Ca 0.02 Ti 0.96 Sn 0.04 O 3 thin films

Microstructures and Electrical Properties of 0.5(ba0.7ca0.3)tio3–0.5ba(zr0.2ti0.8)o3 Thin Films Prepared by a Sol–gel Route

Enhanced Dielectric and Piezoelectric Properties of (100) Oriented Bi0.5Na0.5TiO3–BaTiO3–SrTiO3 Thin Films

Orientation-dependent Piezoelectricity and Domain Characteristics of Tetragonal Pb(Zr0.3,Ti0.7)0.98Nb0.02O3 Thin Films on Nb-doped SrTiO3 Substrates

Influence of MgO and ZrO2 buffer layers on dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel processing

Microstructure and electric properties of BCZT thin films with seed layers

Preparation of Ba0.85 Ca0.15 Ti0.9 Zr0.1 O3 Thin Films by PLD and Its Property

A Comparative Study of Fibre-Textured and Epitaxial Nb-doped Pb(Zr0.53Ti0.47)O3 Thin Films on Different Substrates

Dielectric Tunability Properties in (110)-Oriented Epitaxial 0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Films Prepared by PLD Method

Structural, Dielectric and Piezoelectric Properties of (bi0.5na0.5)tio3–(bi0.5k0.5)tio3–bi(zn0.5ti0.5)o3 Thin Films Prepared by Sol–gel Method

LaNiO3 Seed Layer Induced Enhancement of Piezoelectric Properties in (100)-Oriented (1−x)bzt–xbct Thin Films

Dielectric and piezoelectric properties of highly (1 0 0)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer

Structural And Dielectric Properties Of Ba(Zrxti1-X)O-3 Thin Films Prepared By The Sol-Gel Process

Dielectric and piezoelectric properties of highly (100)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer

Piezoelectric and Dielectric Properties of Multilayered BaTiO3/(Ba,Ca)TiO3/CaTiO3 Thin Films.

Orientation Dependence on Piezoelectric Properties of Bi0.5Na0.5TiO3-BaTiO3-SrTiO3 Epitaxial Thin Films

Crystallization, phase evolution and ferroelectric properties of sol-gel-synthesized Ba(Ti0.8Zr0.2)O3-x(Ba 0.7Ca0.3)TiO3 thin films

Thickness and Nb-Doping Effects on Ferro- and Piezoelectric Properties of Highly A-Axis-Oriented Nb-Doped Pb(Zr0.3ti0.7)O-3 Films

Giant Piezoelectric Properties of BZT–0.5BCT Thin Films Induced by Nanodomain Structure