Abstract:It is relatively easy to obtain highly oriented/textured Ba(ZrxTi1–x)O3 (BZT) films by magnetron sputtering, but it is complicated to control the composition of these sputtered oriented films. Here, a series of BZT ceramic targets with different ingredients (x = 0.05, 0.1, 0.15, 0.2, 0.25, and 0.3) and a BaTiO3 (x = 0) target were fabricated by solid-state sintering. Then, the corresponding BZT thin films were deposited on LaNiO3 (LNO) buffered Pt/Ti/(001)Si substrates adopting radio-frequency magnetron sputtering. Benefit from the prefabricated (001)-LNO buffer layer and optimized BZT film preparation process, all BZT films exhibit highly (00l) preferred orientation. However, the degree of orientation, lattice parameter, dielectric properties, ferroelectric behaviors, and energy-storage characteristics are all highly dependent on the Zr content of BZT films sputtered by targets with the same composition. (00l)-oriented BZT films with relatively low Zr content have a better crystalline structure [narrower full width at half maximum (FWHM), larger grains]. It is also found that the rising of the Zr content in (00l)-oriented BZT films will result in a larger out-of-plane lattice parameter, and these results indicate that the doping amount of Zr will strongly change the heterointerface stress/strain states and the growth mode of the oriented films, and then effectively tailor their electric performances.

Orientation dependence of the dielectric and piezoelectric properties for the Ba 0.98 Ca 0.02 Ti 0.96 Sn 0.04 O 3 thin films

Crystallographic Orientation Dependence of Dielectric Response in Lead Strontium Titanate Thin Films

Effect of Sputtering-Target Composition on the Structure, Dielectric, Ferroelectric, and Energy Storage Properties of Highly (00L)-Oriented Ba(ZrxTi1–x)O3 Films

Manipulation of phase transitions and electrical properties of Ba<sub>1-x</sub>Sr<sub>x</sub>TiO<sub>3</sub> thin films through orientation engineering

Dielectric and piezoelectric properties of the Ba0.92Ca 0.08Ti0.95Zr0.05O3 thin films grown on different substrate

Enhanced Dielectric and Piezoelectric Properties of (100) Oriented Bi0.5Na0.5TiO3–BaTiO3–SrTiO3 Thin Films

Effect of Crystal Orientation on the Phase Diagrams, Dielectric and Piezoelectric Properties of Epitaxial BaTiO3 Thin Films

Orientation Dependence on Piezoelectric Properties of Bi0.5Na0.5TiO3-BaTiO3-SrTiO3 Epitaxial Thin Films

Influence of Orientation on Dielectric and Ferroelectric Properties of the BNT-BT-ST Thin Films

Piezoelectric and Dielectric Properties of Multilayered BaTiO3/(Ba,Ca)TiO3/CaTiO3 Thin Films.

Crystallographic Orientation Dependence of Piezoelectric and Dielectric Properties of Bnt-Based Thin Films

Manipulation of phase transitions and electrical properties of Ba1-Sr TiO3 thin films through orientation engineering

Structure and Dielectric Properties of Highly (100)-Oriented PST Thin Films Deposited on MgO Substrates

Orientation-dependent Piezoelectricity and Domain Characteristics of Tetragonal Pb(Zr0.3,Ti0.7)0.98Nb0.02O3 Thin Films on Nb-doped SrTiO3 Substrates

Dielectric and piezoelectric properties of highly (100)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer

Orientation Dependence on Piezoresponse of Lead-Free Piezoelectric Sodium Bismuth Titanate Epitaxial Thin Films

Dielectric and piezoelectric properties of highly (1 0 0)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer

Orientation and Electrode Configuration Dependence on Ferroelectric, Dielectric Properties of BaTiO3 Thin Films

Dielectric Relaxation, Impedance Spectra, Piezoelectric Properties of (ba, Ca)(Ti, Sn)O3 Ceramics and Their Multilayer Piezoelectric Actuators

Thickness Dependent Dielectric and Piezoelectric Properties of BNT–BT–ST Thin Films

Characterization of (100)-Oriented BiScO3–PbTiO3 Thin Films Synthesized by a Modified Sol-Gel Method