The energy-storage performance and dielectric properties of (0.94-x)BNT-0.06BT-xST thin films prepared by sol–gel method
Yanjiang Xie,Hua Hao,Juan Xie,Zichen He,Shuo Zhang,Zongxin Li,Minghe Cao,Zhonghua Yao,Hanxing Liu
DOI: https://doi.org/10.1016/j.jallcom.2020.158164
IF: 6.2
2021-04-01
Journal of Alloys and Compounds
Abstract:<p>Lead-free (0.94-x)Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>–0.06BaTiO<sub>3</sub><sub>−x</sub>SrTiO<sub>3</sub> (abbreviated as BNT-BT-xST, x = 0, 0.05, 0.10, 0.15, 0.20) thin films were grown onto the Pt/Ti/SiO<sub>2</sub>/Si substrate via a sol-gel/spin-coating method. Effect of Sr introduction on the microstructures, dielectric properties and energy-storage density of the thin films was researched. As a consequence, the addition of ST enhanced the maximum polarization and dielectric constant of the thin films. BNT-BT-0.05ST thin film existed high maximum recoverable energy-storage densigty (U<sub>e</sub>) 22.5 J/cm<sup>3</sup>, dielectric constant 1120 and low dielectric loss about 0.04 at 1 kHz. Moreover, the thin films showed excellent dielectric temperature stability at the measured temperature range among 25–200 °C. These results indicated that BNT-BT-0.05ST thin film can be a promising candidate for lead-free energy storage capacitor.</p>
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering