Abstract:Yttrium-doped Ba0.6Sr0.4TiO3 thin films with different thickness (related with layer number of BST films) were prepared by Sol-gel method. The influence of thickness on structure and dielectric properties of the films were studied. Atomic force microscope shows that Y-doped BST films can improve the surface morphologies obviously, which is strongly related to film thickness. When the thickness is appropriate (the layer number is 8), the grain is smaller, denser and more homogeneous; the grain boundary is clear. However, X-ray diffraction pattern presents that the Y-doped BST films reveal perovskite structure and grow mainly along (110) orientation. With the increase of thickness, the diffraction intensity of (110) peak first increases and then decreases, which indicates that phase structure is related to the film thickness. The Y-doped BST films show markedly improved dielectric properties related to film thickness. When the thickness increases, the capacitance or the dielectric constant decreases. The film with 8 layers shows the best dielectric properties. The capacitance is 17.8 pF (the dielectric constant is 130) and the dielectric loss (tan delta) is 0.0057 at zero bias. The tunability can reach 32% and the figure of merit is 56. The Y-doped BST thin films with above marked performance can satisfy the requirements of microwave tuning device. The related mechanism was also analyzed.

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