Abstract:Epitaxial Pb(Zr,Ti)O3(PZT) films, 1.5–2.0μm in thickness, with a Zr∕(Zr+Ti) ratio ranging from 0.20 to 0.75 were grown on (100)c-,(110)c-, and (111)c-oriented SrRuO3∕∕SrTiO3 substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The effects the Zr∕(Zr+Ti) ratio had on the crystal structure, dielectric and ferroelectric properties, and piezoelectric response of these films with different crystal orientations were systematically investigated. We ascertained from x-ray-diffraction reciprocal-space-mapping analysis that (001)T-∕(100)T-∕(100)R-,(101)T-∕(110)T-∕(110)R-∕(101¯)R-, and (111)T-∕(111)R-∕(111¯)R-oriented films had epitaxially grown on the respective (100)c-,(110)c-, and (111)c-oriented SrRuO3∕∕SrTiO3 substrates. The constituent phase changed from a tetragonal single phase, a mixture phase of a tetragonal and rhombohedral, to a rhombohedral single phase with increasing Zr∕(Zr+Ti) ratio irrespective of the orientation of the substrates. However, the range of the Zr∕(Zr+Ti) ratio of the film with the mixture phase differed depending on crystal orientation. This suggests that the stress relaxation process applied from the substrates changed due to crystal orientation. The relative dielectric constant was maximum for films with the mixture phase regardless of the crystal orientation. Remanent polarization was also maximum for these films on the (111)cSrRuO3∕∕SrTiO3 substrates, while it was minimum on the (100)c- and (110)c-oriented SrRuO3∕∕SrTiO3 substrates. Films with two phases coexisting had larger electric-field-induced strain than films with a single tetragonal or rhombohedral phase for the (111)-oriented films, but there were no remarkable changes in the (100)- and (110)-oriented films. Small ac signal measurements suggested that domain-wall motions easily occurred in the (111)-oriented films with the mixture phase compared with other orientations. These results indicated that the larger field-induced strain of the (111)-oriented PZT films consisting of a mixture of tetragonal and rhombohedral phases largely contributed to extrinsic factors such as domain-wall motions and phase transformation due to the applied electric field.

Thickness-Dependent Phase Transition and Piezoelectric Response in Textured Nb-Doped Pb(Zr0.52Ti0.48)O3 Thin Films

Enhanced ferro- and piezoelectric properties in (100)-textured Nb-doped Pb(ZrxTi1 - x)O3 films with compositions at morphotropic phase boundary

Thickness and Nb-Doping Effects on Ferro- and Piezoelectric Properties of Highly A-Axis-Oriented Nb-Doped Pb(Zr0.3ti0.7)O-3 Films

Shifting of the Morphotropic Phase Boundary and Superior Piezoelectric Response in Nb-doped Pb(Zr, Ti)O3 Epitaxial Thin Films

Composition–phase Structure Relationship and Thickness-Dependent Ferroelectricity of Rhombohedral Phase in [111]-Textured Nb-doped Pb(Zr,Ti)O3 Thin Films

Composition-phase structure relationship and thickness-dependent ferroelectricity of rhombohedral phase in [1 1 1]-textured Nb-doped Pb(Zr,Ti)O3 thin films

Facile Preparation and Performance of Novel High-Tc Xbi(ni1/2ti1/2)o3-(1-x)pb(zr1/2ti1/2)o3 Piezoceramics

A Comparative Study of Fibre-Textured and Epitaxial Nb-doped Pb(Zr0.53Ti0.47)O3 Thin Films on Different Substrates

Shifted Morphotropic Phase Boundary in [111]-Oriented Nb-Doped Pb(ZrxTi1–x)O3 Epitaxial Films: Insights into Piezoelectricity and Domain Variation

Effect of the orientation polarization and texturing on nano-mechanical and piezoelectric properties of PZT (52/48) films

Orientation-dependent Piezoelectricity and Domain Characteristics of Tetragonal Pb(Zr0.3,Ti0.7)0.98Nb0.02O3 Thin Films on Nb-doped SrTiO3 Substrates

Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr0.6Ti0.4O3 Thin Films

Phase Transition and Electrical Properties of Highly [1 1 1]-Oriented and Niobium-Modified Pb(ZrxTi1−x)O3thin Films with Different Zr/Ti Ratios

Shift of Morphotropic Phase Boundary in High-Performance [111]-Oriented Epitaxial Pb (zr, Ti)O-3 Thin Films

Phase structure and electrical properties of x PZN–(1− x )PZT piezoceramics near the tetragonal/rhombohedral phase boundary

Thickness-dependent phase boundary in Sm-doped BiFeO3 piezoelectric thin films on Pt/Ti/SiO2/Si substrates

Temperature and Composition Dependent Phase Transitions of Lead-Free Piezoelectric (Bi0.5na0.5)tio3-Batio3 Thin Films.

Enhancement of the piezoelectric property in PMN-PZT/PZT thin films

Phase Structure of Epitaxial Pb(Zr,Ti)O-3 Thin Films on Nb-Doped Srtio3 Substrates

Dependence of electrical properties of epitaxial Pb(Zr,Ti)O3 thick films on crystal orientation and Zr∕(Zr+Ti) ratio

Thickness-dependent Switching Behavior of 0.8(Bi0.5na0.5)tio3-0.2Srtio3 Lead-Free Piezoelectric Thin Films