Abstract:Lead zirconate titanate (PZT) films with high Nb concentrations (6–13 mol%) were grown by chemical solution deposition. In concentrations up to 8 mol% Nb, the films self-compensate the stoichiometry; single phase films were grown from precursor solutions with 10 mol% PbO excess. Higher Nb concentrations induced multi-phase films unless the amount of excess PbO in the precursor solution was reduced. Phase pure perovskite films were grown with 13 mol% excess Nb with the addition of 6 mol% PbO. Charge compensation was achieved by creating lead vacancies when decreasing excess PbO level; using Kroger-Vink notation, NbTi• are ionically compensated by VPb′′ to maintain charge neutrality in heavily Nb-doped PZT films. With Nb doping, films showed suppressed {100} orientation, the Curie temperature decreased, and the maximum in the relative permittivity at the phase transition broadened. The dielectric and piezoelectric properties were dramatically degraded due to increased quantity of the non-polar pyrochlore phase in multi-phase films; εr reduced from 1360 ± 8 to 940 ± 6, and the remanent d33,f value decreased from 112 to 42 pm/V when increasing the Nb concentration from 6 to 13 mol%. Property deterioration was corrected by decreasing the PbO level to 6 mol%; phase pure perovskite films were attained. εr and the remanent d33,f increased to 1330 ± 9 and 106 ± 4 pm/V, respectively. There was no discernable difference in the level of self-imprint in phase pure PZT films with Nb doping. However, the magnitude of the internal field after thermal poling at 150 °C increased significantly; the level of imprint was 30 kV/cm and 11.5 kV/cm in phase pure 6 mol% and 13 mol% Nb-doped films, respectively. The absence of mobile VO••, coupled with the immobile VPb′′ in 13 mol% Nb-doped PZT films, leads to lower internal field formation upon thermal poling. For 6 mol% Nb-doped PZT films, the internal field formation was primarily governed by (1) the alignment of (VPb′′−VO•• )x and (2) the injection and subsequent electron trapping by Ti4+. For 13 mol% Nb-doped PZT films, hole migration between VPb′′ controlled internal field formation upon thermal poling.

Enhanced ferro- and piezoelectric properties in (100)-textured Nb-doped Pb(ZrxTi1 - x)O3 films with compositions at morphotropic phase boundary

Thickness-Dependent Phase Transition and Piezoelectric Response in Textured Nb-Doped Pb(Zr0.52Ti0.48)O3 Thin Films

Thickness and Nb-Doping Effects on Ferro- and Piezoelectric Properties of Highly A-Axis-Oriented Nb-Doped Pb(Zr0.3ti0.7)O-3 Films

Composition-phase structure relationship and thickness-dependent ferroelectricity of rhombohedral phase in [1 1 1]-textured Nb-doped Pb(Zr,Ti)O3 thin films

Phase Transition and Electrical Properties of Highly [1 1 1]-Oriented and Niobium-Modified Pb(ZrxTi1−x)O3thin Films with Different Zr/Ti Ratios

Shift of Morphotropic Phase Boundary in High-Performance [111]-Oriented Epitaxial Pb (zr, Ti)O-3 Thin Films

Composition–phase Structure Relationship and Thickness-Dependent Ferroelectricity of Rhombohedral Phase in [111]-Textured Nb-doped Pb(Zr,Ti)O3 Thin Films

Shifting of the Morphotropic Phase Boundary and Superior Piezoelectric Response in Nb-doped Pb(Zr, Ti)O3 Epitaxial Thin Films

Shifted Morphotropic Phase Boundary in [111]-Oriented Nb-Doped Pb(ZrxTi1–x)O3 Epitaxial Films: Insights into Piezoelectricity and Domain Variation

Facile Preparation and Performance of Novel High-Tc Xbi(ni1/2ti1/2)o3-(1-x)pb(zr1/2ti1/2)o3 Piezoceramics

Temperature-dependent electrical properties of 0.5Pb(NiNb)O–(0.5 − )PbTiO–PbZrO piezoceramics near the morphotropic phase boundary

Effect of the orientation polarization and texturing on nano-mechanical and piezoelectric properties of PZT (52/48) films

Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr0.6Ti0.4O3 Thin Films

Phase structure and electrical properties of x PZN–(1− x )PZT piezoceramics near the tetragonal/rhombohedral phase boundary

Enhancement of the piezoelectric property in PMN-PZT/PZT thin films

A Comparative Study of Fibre-Textured and Epitaxial Nb-doped Pb(Zr0.53Ti0.47)O3 Thin Films on Different Substrates

A new Pb(Lu1/2Nb1/2)O3-PbZrO 3-PbTiO3 ternary solid solution with morphotropic region and high Curie temperature

Preparation, Structure, and Electric Properties of the Pb(Zn1/3Nb2/3)O3–Pb(Yb1/2Nb1/2)O3–PbTiO3 Ternary Ferroelectric System Ceramics Near the Morphotropic Phase Boundary

Temperature-dependent electrical properties of 0.5Pb(Ni 1/3 Nb 2/3 )O 3 –(0.5 − x )PbTiO 3 – x PbZrO 3 piezoceramics near the morphotropic phase boundary

Tuning Nb Solubility, Electrical Properties, and Imprint through PbO Stoichiometry in PZT Films

Orientation-dependent Piezoelectricity and Domain Characteristics of Tetragonal Pb(Zr0.3,Ti0.7)0.98Nb0.02O3 Thin Films on Nb-doped SrTiO3 Substrates