Abstract:Different symmetry phases are identified in PbZr0.6Ti0.4O3 ferroelectric thin films as function of the strain introduced by CaF2, SrTiO3 and PMN‐PT substrates. Measured strain‐temperature paths are successfully described by a multi‐domain LGD‐model that predicts the symmetry phases and phase transitions, and the observed enhanced piezoelectricity in one of the phases. Lead based bulk piezoelectric materials, e.g., PbZrxTi1‐xO3 (PZT), are widely used in electromechanical applications, sensors, and transducers, for which optimally performing thin films are needed. The results of a multi‐domain Landau–Ginzberg‐Devonshire model applicable to clamped ferroelectric thin films are used to predict the lattice symmetry and properties of clamped PZT thin films on different substrates. Guided by the thermal strain phase diagrams that are produced by this model, experimentally structural transitions are observed. These can be related to changes of the piezoelectric properties in PZT(x = 0.6) thin films that are grown on CaF2, SrTiO3 (STO) and 70% PbMg1/3Nb2/3O3‐30% PbTiO3 (PMN‐PT) substrates by pulsed laser deposition. Through temperature en field dependent in situ X‐ray reciprocal space mapping (RSMs) and piezoelectric force microscopy (PFM), the low symmetry monoclinic phase and polarization rotation are observed in the film on STO and can be linked to the measured enhanced properties. The study identifies a monoclinic ‐rhombohedral MC‐MA‐R crystal symmetry path as the polarization rotation mechanism. The films on CaF2 and PMN‐PT remain in the same symmetry phase up to the ferroelectric‐paraelectric phase transition, as predicted. These results support the validity of the multi‐domain model which provides the possibility to predict the behavior of clamped, piezoelectric PZT thin films, and design films with enhanced properties.

Shifting of the Morphotropic Phase Boundary and Superior Piezoelectric Response in Nb-doped Pb(Zr, Ti)O3 Epitaxial Thin Films

Shift of Morphotropic Phase Boundary in High-Performance [111]-Oriented Epitaxial Pb (zr, Ti)O-3 Thin Films

Shifted Morphotropic Phase Boundary in [111]-Oriented Nb-Doped Pb(ZrxTi1–x)O3 Epitaxial Films: Insights into Piezoelectricity and Domain Variation

Thickness-Dependent Phase Transition and Piezoelectric Response in Textured Nb-Doped Pb(Zr0.52Ti0.48)O3 Thin Films

Enhanced ferro- and piezoelectric properties in (100)-textured Nb-doped Pb(ZrxTi1 - x)O3 films with compositions at morphotropic phase boundary

A Comparative Study of Fibre-Textured and Epitaxial Nb-doped Pb(Zr0.53Ti0.47)O3 Thin Films on Different Substrates

Thickness and Nb-Doping Effects on Ferro- and Piezoelectric Properties of Highly A-Axis-Oriented Nb-Doped Pb(Zr0.3ti0.7)O-3 Films

Phase Structure of Epitaxial Pb(Zr,Ti)O-3 Thin Films on Nb-Doped Srtio3 Substrates

Facile Preparation and Performance of Novel High-Tc Xbi(ni1/2ti1/2)o3-(1-x)pb(zr1/2ti1/2)o3 Piezoceramics

Phase Transition, Switching Characteristics of MPB Compositions and Large Strain in Lead-Free (Bi0.5na0.5)tio3-Based Piezoceramics

Orientation-dependent Piezoelectricity and Domain Characteristics of Tetragonal Pb(Zr0.3,Ti0.7)0.98Nb0.02O3 Thin Films on Nb-doped SrTiO3 Substrates

Composition-phase structure relationship and thickness-dependent ferroelectricity of rhombohedral phase in [1 1 1]-textured Nb-doped Pb(Zr,Ti)O3 thin films

Composition–phase Structure Relationship and Thickness-Dependent Ferroelectricity of Rhombohedral Phase in [111]-Textured Nb-doped Pb(Zr,Ti)O3 Thin Films

Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr0.6Ti0.4O3 Thin Films

Deconvolved Intrinsic and Extrinsic Contributions to Electrostrain in High Performance, Nb-doped Pb(Zr Ti1-)O3 Piezoceramics (0.50 ≤ X ≤ 0.56)

Single-Crystal Nb-Doped Pb(Zr,Ti)O-3 Thin Films on Nb-Doped Srtio3 Wafers with Different Orientations

Effect of Zr/Ti Ratio on the Properties of PMMN–PZT Ceramics Near the Morphotropic Phase Boundary

Crystal structure and actuation mechanisms in morphotropic phase boundary Pb(Zn 1/3 Nb 2/3 )O 3 ‐Pb(Zr 1/2 Ti 1/2 )O 3 piezoelectric ceramic

Piezoelectric properties of 0.02Pb(Zn1/3Nb2/3)O3-0.50Pb(Ni1/3Nb2/3)O3-0.48Pb (ZrxTi1-x)O3 ceramics near the morphotropic phrase boundary

Local Study on the Composition and Temperature Induced Structural Change of Pzt

Phase Distribution and Corresponding Piezoelectric Responses in a Morphotropic Phase Boundary Pb(Mg Nb )O3-Pbtio3 Single Crystal Revealed by Confocal Raman Spectroscopy and Piezo-Response Force Microscopy