Ferroelectric Batio3 Thin Films On Ni Metal Tapes Using Nio As Buffer Layer

zhiqiang yuan,jianjun liu,j h weaver,c l chen,j c jiang,bowen lin,victor giurgiutiu,a s bhalla,r y guo

DOI: https://doi.org/10.1063/1.2739082

IF: 4

2007-01-01

Applied Physics Letters

Abstract:Ferroelectric BaTiO3 (BTO) thin films were deposited on NiO buffered polycrystalline Ni tapes by pulsed laser deposition. Microstructural studies by x-ray diffractometer and transmission electron microscopy reveal that the as-grown BTO films have the nanopillar structures with an average size of approximately 80 nm in diameter and the good interface structures with no interdiffusion or reaction. The dielectric and ferroelectric property measurements exhibit that the BTO films have a relatively large dielectric constant, a small dielectric loss, and an extremely large piezoelectric response with a symmetric hysteresis loop. These excellent properties indicate that the as-fabricated BTO films are promising for the development of the structural health monitoring systems. (C) 2007 American Institute of Physics.