Structure and electrical properties of c-axis epitaxial Srm−3Bi4TimO3m+3(m=5 and 6) thin films

Lei Wang,Lu-Yi Ding,Shan-Tao Zhang,Yan-Feng Chen,Zhi-Guo Liu
DOI: https://doi.org/10.1016/j.ssc.2009.08.018
IF: 1.934
2009-01-01
Solid State Communications
Abstract:C-axis epitaxial Srm−3Bi4TimO3m+3 (SBTim, m=5 and 6) thin films were fabricated on conductive LaNiO3 (LNO) coated LaAlO3 (LAO) substrates by pulsed laser deposition. The structure was characterized by x-ray diffraction (including θ−2θ, rocking curve, and ϕ scans) and atomic force microscopy. The epitaxial relationship was established (001)SBTim//(001)LNO//(001)LAO, [100]SBTim//[110]LNO//[110]LAO when orthorhombic structure indexing was used for SBTim. It is revealed that the films with odd m have a ferroelectric hysteresis loops whereas those with even m have collinear polarization-electric field curves. The microstructure background responsible for the observations was discussed. Our results provide further evidence that the c-axis polarization of Bi-layered oxides depends on the parity of m.
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