Epitaxial Growth and Dielectric Properties of Homologous Srm−3Bi4TimO3m+3 (m=3,4,5,6) Thin Films
ST Zhang,YF Chen,HP Sun,XQ Pan,ZG Liu,NB Ming
DOI: https://doi.org/10.1063/1.1530741
IF: 4
2002-01-01
Applied Physics Letters
Abstract:The first four members of Bi-layered Srm−3Bi4TimO3m+3 homologous series with m=3, 4, 5, and 6, i.e., Bi4Ti3O12, SrBi4Ti4O15, Sr2Bi4Ti5O18, and Sr3Bi4Ti6O21, were grown on SrTiO3 (001) single-crystal substrates by pulsed-laser deposition. X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) reveal that the films grew epitaxially with in-plane epitaxial alignment of [11̄0]Srm−3Bi4TimO3m+3‖[010]SrTiO3. HRTEM cross-sectional images show that the films with m=3, 4, and 5 are nearly free of intergrowth, whereas a number of growth defects were observed in the film with m=6. Using an evanescent microwave probe, the room-temperature dielectric constants of these epitaxial films are measured to be 221±13, 205±15, 261±29, and 249±17 for films with m=3, 4, 5, and 6, respectively.