X-ray Diffraction and Raman Scattering Study of SrBi2Ta2O9 Ceramics and Thin Films with Bi3TiNbO9 Addition

Js Zhu,Hx Qin,Zh Bao,Yn Wang,Wy Cai,Pp Chen,W Lu,Hlw Chan,Cl Choy

DOI: https://doi.org/10.1063/1.1421642

IF: 4

2001-01-01

Applied Physics Letters

Abstract:Good ferroelectric properties have previously been reported for both the (1−x)SrBi2Ti2O9–xBi3TiNbO9 bulk ceramics and thin films. In this work, x-ray diffraction and Raman scattering were used to investigate the effect of the incorporation of Bi3TiNbO9 into SrBi2Ta2O9 bulk ceramics and thin films. A better crystallization, larger grain size and larger displacement of the Ta–O(4) or Ta–O(5) ions are the origin for the good ferroelectric properties of (1−x)SrBi2Ta2O9–xBi3TiNbO9 with x=0.3–0.4.