Investigations on Raman and X-ray photoemission scattering patterns of vanadium-doped SrBi4Ti4O15 ferroelectric ceramics

Jun Zhu,Xiao-Bing Chen,Jun-hui He,Jian-Cang Shen
DOI: https://doi.org/10.1016/j.physleta.2006.10.031
IF: 2.707
2007-01-01
Physics Letters A
Abstract:Vanadium incorporation in SrBi4Ti4O15 results in an improvement of electric properties. Raman scattering reveals that V-addition brings about the local disorders of structure, charge, and internal stress. The chemical valence of Bi and Ti does not increase after V-doping. The electric property improvement is originated from the restraint of oxygen vacancies, mobility weakening of the defects, and the vacancies produced at A-site.
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