Doping Effect on the Phase Transition Temperature in Ferroelectric SrBi2−xNdxNb2O9 Layer‐structured Ceramics: a Micro‐raman Scattering Study

Kai Jiang,Wenwu Li,Xiangui Chen,Zhenni Zhan,Lin Sun,Zhigao Hu,Junhao Chu
DOI: https://doi.org/10.1002/jrs.3075
IF: 2.727
2011-01-01
Journal of Raman Spectroscopy
Abstract:The temperature dependence of Raman spectra for SrBi2−xNdxNb2O9 ceramics (x from 0 to 0.2) has been studied in a wide temperature range from 80 to 873 K. It is found that the peak position of the A1g[Nb] phonon mode at 207 cm–1, which is directly associated with the distortion of NbO6 octahedron, decreases with increasing Nd composition, while the A1g[O] phonon mode at 835 cm–1 increases. Moreover, both the peak position and intensity of the A1g[Nb] phonon mode reveal strong anomalies around the ferroelectric to paraelectric phase transition temperature. It indicates that the phase transition temperature decreases from about 710 to 550 K with increasing Nd composition, which is due to the fact that the introduction of Nd ions in the Bi2O2 layers reduces the distortion extent of NbO6 octahedron. Copyright © 2011 John Wiley & Sons, Ltd.
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