Structural and Ferroelectric Properties of La Modified Sr0.8bi2.2ta2o9 Thin Films

Haifeng Shi,Caixia Yang,Yinyin Lin,Ting-Ao Tang
DOI: https://doi.org/10.1016/j.materresbull.2005.04.024
IF: 5.6
2005-01-01
Materials Research Bulletin
Abstract:La modified SBT (Sr0.8La0.1Bi2.1Ta2O9) thin films of different thickness were fabricated on Pt/Ti/SiO2/Si substrates by the metalorganic decomposition technique. All the films were annealed layer-by-layer at 800°C using a rapid thermal annealing furnace. X-ray diffraction analysis indicated that the relative intensity of the (200) diffraction peak [I(200)/I(115)] increased with the increase of the film thickness. Eventually, an a-axis preferentially oriented SLBT film was obtained. These results are discussed with respect to the anisotropy of the grain growth. The a-axis preferentially oriented SLBT film, whose relative intensity of the (200) peak [I(200)/I(115)] was 1.05, had a remanent polarization (2Pr) value of 21μC/cm2 and a coercive field (2Ec) value of 70kV/cm under the electric field of 200kV/cm.
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