Pulsed laser deposition and characteristics of SrBi2 TaNbO9 thin films

Pingxiong Yang,Lirong Zheng,Chenglu Lin,Alain Pignolet,Christopher Curran,Marin Alexe,Dietrich Hesse
1998-01-01
Journal of the Korean Physical Society
Abstract:Ferroelectric SrBi2 TaNbO9 (SBTN) thin films were synthesized on the Si/SiO2/Ti/Pt substrates by pulsed laser deposition (PLD), and the ferroelectric properties of SBTN films were studied. The high diffraction peak of (115) was characterized by x-ray diffractometer (XRD). The film exhibits good ferroelectric properties; the remnant polarization and coercive field were about 14 μC/cm2 and 54 kV/cm, respectively. No fatigue was observed up to 1010 switching cycles. Switching current versus voltage (I-V) characteristic showed two peaks near the coercive field and a static dielectric constant of 400 at zero applied voltage.
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