Structural and Electrical Properties of Epitaxial Sbt Thin Films by Pld

SM Koo,S Mangenot,LR Zheng,KV Rao
DOI: https://doi.org/10.1080/00150199908009129
1999-01-01
Ferroelectrics
Abstract:Ferroelectric SrBi2Ta2O9 (SBT) thin films have been grown epitaxially on YBCO/LaAlO3 (100) substrates by using a Nd:YAG pulsed laser deposition technique. The films are found to be highly c-axis oriented epitaxial and the x-ray diffraction (XRD) rocking curves show a narrow FWHM about 0.84 degrees for SET (0012) peak. The high epitaxial quality of such films are also evidenced by XRD phi scans, and atomic force microscopy (AFM) measurements, which reveal a mosaic structure of the SET films. The feature size of the mosaics is around 1 mu m with an average roughness of about 10nm. The electrical properties of the films such as polarization, dielectric permittivity have also been studied. It is found that the polarization of SET along c-axis is much very small (Pr=1.1 mu C/cm(2)) and the dielectric constant of the epitaxial film is around 200.
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