Abduleziz Ablat,Mamatrishat Mamat,Yasin Ghupur,Rong Wu,Emin Muhemmed,Jiaou Wang,Haijie Qian,Rui Wu,Kurash Ibrahim
Abstract:Multiferroic bismuth ferrite (BiFeO3) thin films were prepared by pulsed laser deposition (PLD) technique. Electronic structures of the film have been studied by in situ photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). Both the Fe 2p PES and XAS spectra show that Fe ion is formally in +3 valence state. The Fe 2p and O K edge XAS spectra indicate that the oxygen octahedral crystal ligand field splits the unoccupied Fe 3d state to t2g and eg states. Valence band Fe 2p-3d resonant photoemission results indicate that hybridization between Fe 3d and O 2p plays important role in the multiferroic BiFeO3 thin films.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the relationship between the multiferroic properties of bismuth ferrite (BiFeO₃, abbreviated as BFO) thin films and their electronic structures. Specifically, the research aims to deeply explore the electronic structure in BFO thin films, especially the valence - band state, through in - situ photoemission spectroscopy (PES) and X - ray absorption spectroscopy (XAS) techniques, so as to reveal the origin of its multiferroic properties.
### Research Background and Problems
1. **Importance of Multiferroic Materials**
- Multiferroic materials refer to a class of materials that simultaneously possess multiple ferroelectric properties (such as ferroelectricity, ferromagnetism, and ferroelasticity) in the same system.
- These materials can modulate the magnetization intensity by an applied electric field, or modulate the electric polarization by an applied magnetic field. This effect is called the magnetoelectric effect.
- BFO is one of the few multiferroic materials that exhibit the magnetoelectric effect at room temperature, so it is considered an ideal candidate for potential electronic device applications.
2. **Challenges of BFO**
- The main problem that BFO faces in practical applications is that it is prone to lose its multiferroic properties, which is usually attributed to the presence of a small amount of Fe²⁺ ions or oxygen vacancies.
- To solve this problem, researchers have tried different growth techniques and doping methods to reduce or eliminate Fe²⁺ ion impurities.
3. **Existing Controversies**
- Regarding the electronic band structure of BFO, there are controversial theoretical calculation results. Some studies show that the Bi 6p state is located 4 eV above the band gap, while other studies show that the Bi 6p state contributes to both the valence band and the conduction band.
- Experimentally, there are fewer studies on the valence - band electronic structure, and the existing experimental results also fail to fully explain these controversies.
### Specific Objectives of the Paper
- **Through in - situ PES and XAS techniques**, study the valence - band state of BFO thin films to reveal possible contribution pathways, so as to explain the above - mentioned controversies.
- **Verify the valence state of Fe ions**: Through PES and XAS measurements, confirm whether Fe ions are mainly in the +3 valence state.
- **Study the hybridization of Fe 3d and O 2p orbitals**: By analyzing O K - edge XAS and Fe 2p - 3d resonant photoemission spectroscopy (RPES), explore the hybridization between Fe 3d and O 2p orbitals and its influence on the BFO electronic structure.
### Conclusions
Through a detailed study of the electronic structure of BFO thin films, the paper draws the following conclusions:
- Fe ions are mainly in the +3 valence state (Fe³⁺), which conforms to the high - spin configuration t₂g³↑eg²↑.
- The valence band and the conduction band are mainly composed of Fe 3d and O 2p states through hybridization, and d - d transitions play a key role in the electronic properties of BFO.
In summary, this research provides an important electronic - structure basis for understanding the multiferroic properties of BFO and a theoretical basis for further optimizing its performance.