Electric-Field-Controlled Antiferromagnetic Domains in Epitaxial Bifeo3 Thin Films Probed by Neutron Diffraction
W. Ratcliff,Zahra Yamani,V. Anbusathaiah,T. R. Gao,P. A. Kienzle,H. Cao,I. Takeuchi
DOI: https://doi.org/10.1103/physrevb.87.140405
IF: 3.7
2013-01-01
Physical Review B
Abstract:Direct evidence of controlling the population of magnetic domains in BiFeO 3 thin films through electric field is reported using neutron diffraction. By fabricating BiFeO 3 thin films on vicinal SrTiO 3 substrates, we have achieved ferroelectric monodomains as confirmed by piezoresponse force microscopy. The application of an electric field between the bottom SrRuO 3 and the top electrode switches the ferroelectric domain state with concomitant changes in magnetic reflections observed with neutron diffraction, indicating changes in the antiferromagnetic domain populations. The observed magnetoelectric switching behavior by neutron diffraction is compared with the electric-field effect on the magneto-optical Kerr effect measurement on patterned pads of exchange coupled Co film deposited on top of the BiFeO 3 films. The present result shows possible new directions for the realization of magnetoelectric devices. The magnetoelectric effect in BiFeO 3 (BFO) has previously been investigated through direct imaging with photoemission-electron-microscopy and exchange coupling with an upper ferromagnetic layer. 1–5 However, investigating antiferromag-netic (AFM) domains in BFO is challenging. In single-crystal BFO, changes in AFM domains as electric field is applied have been observed by neutron diffraction. 6,7 However, because device applications require BFO thin films—which can have markedly different domain structures than single crystals 8–10 — the electric-field effect in thin films must be investigated directly. Here, we used neutron diffraction to demonstrate electric-field-induced modulation of AFM domain populations in epitaxial BFO thin films. Co/BFO thin-film multilayers showed electric-field-tunable exchange coupling attributable to the domain-population modulation. It is known that even subtle modification of microstructure can profoundly affect the magnetic structure in epitaxial BFO thin films. 9 Thus, choosing the right BFO structure is imperative. Single-ferroelectric-domain BFO films can be grown on vicinal substrates, 11 which simplifies the investigation of its behavior. 9,10 Here, we deposited 1-μm epitaxial BFO films at 590 • C and 25 mT oxygen partial pressure by pulsed laser deposition on 50-nm SrRuO 3 (SRO)-buffered (bottom electrode) (001)-oriented SrTiO 3 (STO) substrates with a 4 • miscut along the [110] direction. The epitaxial relationship between the film and the substrate were determined through the use of x-ray reciprocal space maps. By using a conventional piezoresponse force microscopy (PFM; Pt/Ir-coated cantilever, scanning along the [110] direction of the substrate), we characterized the films' ferro-electric domain structures. An ac signal [V ac = V 0 sin(2πf t); amplitude, V 0 = 3 V peak−peak and frequency, f = 7 kHz) was applied …