Characterization of low-dielectric-constant SiCON films grown by PECVD under different RF power

Zhang, Lei,Hao-Wen Guo,Zhang, Chi,Wei Zhang,Shijin Ding
DOI: https://doi.org/10.1109/ICSICT.2008.4734662
2008-01-01
Abstract:In this paper, we report the influence of RF power on carbon- and nitride-doped silicon oxide (SiCON) films deposited by PECVD using SiH4, N2O and C2F6 precursors. The deposited films are characterized by means of FTIR and XPS, revealing the coexistence of both ring and network frameworks as well as Si-C, Si-N, C-N, C-H and Si-O bonds. The dielectric constant (k) and deposition rate of the SiCON film decrease with increasing the RF power. In the present experiment, a k value of 2.35 is achieved while retaining a low leakage current of 2.7×10-7A/cm2 at 7.8MV/cm.
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