Abstract:This study focuses on a p-i-n single junction solar cell made of hydrogenated amorphous silicon oxide (a-SiOx:H), aiming to enhance solar cell efficiency by mitigating the impact of discontinuities and mismatches occurring at the i/p defect-rich interface between the window layer and the absorber layer. To address this concern, the impact of adding a thin i-a-SiOx:H buffer layer between the p-a-SiOx:H window layer and the i-a-SiOx:H active layer was investigated through numerical modeling using the AMPS-1D (Analysis of Micro-electronic and Photonic Structures) computer program. Implementing these changes led to a remarkable increase in conversion efficiency, rising from 5.714% to an impressive 8.929%. The increase in short-circuit current (JSC), however, is due to improved quantum efficiency at short wavelengths between 350 and 550 nm. Furthermore, enhancing the built-in potential (Vbi) at the i/p interface, combined with the buffer layer's appropriate band gap energy, increases VOC (open-circuit voltage) from 850 to 993 mV. The substantial improvement in the fill factor (FF) from 63.1 to 83.1% can be largely attributed to the smoothed band offset, primarily facilitated by the presence of the buffer layer at the p/i interface, which led to more efficient extraction of photogenerated holes. To ensure effective usage of the buffer layer, the thickness of a-SiOx:H (buffer layer) varied between 3 nm and 9 nm, while the p-type doping concentration of the same layer was adjusted between 0 and 10 20 cm -3 . In summary, adding a 3 nm thick a-SiOx:H buffer layer with an intermediate band gap and with a p-type doping concentration (NA) below 10 18 cm -3 at the i/p interface improves the electrical and optical properties of the p-i-n solar cells (EFF = 8.951% VOC = 0.994 V; FF = 83.1%; JSC = 10.842 mA/cm 2 ).

Improvement in Performance of Hydrogenated Amorphous Silicon Solar Cells with Hydrogenated Intrinsic Amorphous Silicon Oxide P/i Buffer Layers

The advantages of employing i-a-SiOX:H as a buffer layer in Hydrogenated Amorphous Silicon Oxide solar cells

Mechanism Insight into the Effect of I/P Buffer Layer on the Performance of NIP-type Hydrogenated Microcrystalline Silicon Solar Cells

Role of the Buffer at the Interface of Intrinsic A-Si:H and P-Type A-Si:H on Amorphous/crystalline Silicon Heterojunction Solar Cells

Improving the performance of high-efficiency silicon heterojunction solar cells through low-temperature deposition of an i-a-Si:H anti-epitaxial buffer layer

Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure

Effect of A-Si : H Interface Buffer Layer on the Performance of Hydrogenated Amorphous Silicon Germanium Thin Film Solar Cell

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

Improved Interface Microstructure Between Crystalline Silicon and Nanocrystalline Silicon Oxide Window Layer of Silicon Heterojunction Solar Cells

Influence of Low Rate P/I Interface Layer on the Performance of High Growth Rate Microcrystalline Silicon Solar Cells

25.11% efficiency silicon heterojunction solar cell with low deposition rate intrinsic amorphous silicon buffer layers

Intrinsic layer modification in silicon heterojunctions: Balancing transport and surface passivation

Beyond 25% efficient crystalline silicon heterojunction solar cells with hydrogenated amorphous silicon oxide stacked passivation layers for rear emitter

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

Efficiency improvement of a-Si:H Thin-Film Solar Cells by phosphorus doping of absorption layer with a-Si:H buffer layer at p/i interface

Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO 2 /TiAu/SiO 2 structure

Optimized N-Type Amorphous Silicon Window Layers Via Hydrogen Dilution For Silicon Heterojunction Solar Cells By Catalytic Chemical Vapor Deposition

Role of Hydrogen in Modifying A-Si:H/c-si Interface Passivation and Band Alignment for Rear-Emitter Silicon Heterojunction Solar Cells

Short-circuit Current Density and Fill Factor Improvement by Optimizing In2O3:H and Metal Back Reflector Layers for P-I-n A-Sige:H Thin Film Solar Cells

Underdense A-Si:H Film Capped by A Dense Film As the Passivation Layer of A Silicon Heterojunction Solar Cell

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells