Abstract:A series of systematic studies have been made on both optimum design and preparation technology of high efficiency a-Si/a-Si/a-SiGe triple-junction solar cells. It has been found that current matching is one of the key factors affecting the fill factor of two-terminal tandem solar cells, and excess carrier recombination at the p-n interface acting as an internal electrode is dominated by the density of the minority carriers, interfacial states, and geometrical factor match of the materials at the p-n interface. In this work, mu c-Si:H With wide band gap and high conductivity, which was prepared at low substrate temperature, was used as an n layer of a-Si:H solar cells. In order to improve the n-i interface property, a novel approach involving the insertion of an n(-)a-Si:H buffer layer at the n-i interface was developed. The experimental results show that the buffer layer of appropriate thickness could enhance the till factor and open circuit voltage of a-Si:H based solar cells. In addition, highly photosensitive a-SiGe:H(F) films used for a bottom cell in a-Si/a-Si/a-SiGe triple junction solar cells have been obtained by glow discharge of a gas mixture (SiH4-GeF4-H-2) under conditions of high hydrogen dilution ratio and low deposition pressure. At present, the conversion efficiency of the a-Si/a-Si/a-SiGe triple-junction solar cell of 11.5% with V-oc=2.48 V, J(sc)=6.58 mA/cm(2), and FF=70.4% has been obtained under AM1(100 mW/cm(2)) illumination by optimization of the solar cell structure and preparation technology.

Modification to the Performance of Hydrogenated Amorphous Silicon Germanium Thin Film Solar Cell

Effect of A-Si : H Interface Buffer Layer on the Performance of Hydrogenated Amorphous Silicon Germanium Thin Film Solar Cell

PHOTOELECTRIC STRUCTURE DESIGN OF HIGH EFFICIENCY AMORPHOUS SILICON GERMANIUM SOLAR CELL BASED ON LIGHT MANAGEMENT AND BAND GAP PROFILING

High Efficiency Amorphous Silicon-Germanium Thin Film Solar Cells Using Band Gap Grading

Light management in hydrogenated amorphous silicon germanium solar cells

Improved Power Conversion Efficiency in Radial Junction Thin Film Solar Cells Based on Amorphous Silicon Germanium Alloys

Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

The microstructure of underdense hydrogenated amorphous silicon and its application to silicon heterojunction solar cells

Improvement in Performance of Hydrogenated Amorphous Silicon Solar Cells with Hydrogenated Intrinsic Amorphous Silicon Oxide P/i Buffer Layers

Intrinsic layer modification in silicon heterojunctions: Balancing transport and surface passivation

Fabrication of High Voltage GaAs Micro-Solar Cell Arrays

Fabrication and Research of SiO_x :H Thin Film As an Interlayer in Amorphous/microcrys-Talline Silicon Solar Cells

AMORPHOUS SILICON/AMORPHOUS SILICON GERMANIUM TANDEM SOLAR CELLS ON FLEXIBLE SUBSTRATES

Role of Hydrogen Plasma Pretreatment in Improving Passivation of the Silicon Surface for Solar Cells Applications

Optimum Design And Preparation Of A-Si/A-Si/A-Sige Triple-Junction Solar-Cells

Factors Affecting the Performance of HJT Silicon Solar Cells in the Intrinsic and Emitter Layers: A Review

Development of Highly Stable Hydrogenated Amorphous Silicon Films for Application in Solar Cells

Structural, Eelectronic and Optical Properties of Ultra-thin Hydrogenated Amorphous Germanium Films

Optimum design and preparation of<i>a</i>‐Si/<i>a</i>‐Si/<i>a</i>‐SiGe triple‐junction solar cells

High Pressure Processing of Hydrogenated Amorphous Silicon Solar Cells: Relation Between Nanostructure and High Open-Circuit Voltage