Development of Highly Stable Hydrogenated Amorphous Silicon Films for Application in Solar Cells

QS Lei,ZM Wu,JP Xi,XH Geng,Y Zhao,J Sun
DOI: https://doi.org/10.1142/s0217979206033309
2006-01-01
Abstract:Highly stable hydrogenated amorphous silicon (a-Si:H) films were developed by very high frequency plasma enhanced chemical vapor deposition (VHF PECVD). Their electrical and structural properties were studied. The films were applied as i-layers for p - i - n solar cells. The stability of intrinsic films as well as solar cells was studied. Results suggest that a-Si:H films prepared at high hydrogen dilution ratio (R) and low plasma power (P-W) have low hydrogen content (C-H) and small microstructure factor (R-H) and show high stability against light illumination. The device with i-layer prepared at P-W = 5 W and R = 10 shows a high stability with degradation in fill factor and efficiency of 3.23% and 11.64%, respectively, over 1000 hours illumination. However, the device with i-layer prepared at higher plasma power (P-W = 25 W) and lower hydrogen dilution ratio (R = 5) was much less stable. The stability of the devices is directly related to the stability of the intrinsic materials.
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