Abstract:In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10-3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH₄ = 20 sccm and NH₃ = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells' properties were also investigated. We had found that substrates to get the optimally solar cells' efficiency were 200 °C-deposited GZO-SiNx/PI.

Research on the optimum hydrogenated silicon thin films for application in solar cells

Development of Highly Stable Hydrogenated Amorphous Silicon Films for Application in Solar Cells

Fabrication and Research of SiO_x :H Thin Film As an Interlayer in Amorphous/microcrys-Talline Silicon Solar Cells

Low Temperature and High Deposition Rate Fabricating A-Si:H Thin Films and Solar Cells

PROPERTIES OF PECVD SiNx FILM FOR SOLAR CELLS

Deposition and Characterization of High-Efficiency Silicon Thin-Film Solar Cells by HF-PECVD and OES Technology

STUDY ON MICROCRYSTALLINE SILICON THIN FILM SOLAR CELLS ON FLEXIBLE SUBSTRATE

Study on P-a-Si:H properties of N-type heterogeneous junction solar cells manufactured by large-area parallel plate PECVD machine

Role of SiN x Barrier Layer on the Performances of Polyimide Ga₂O₃-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

Role of Hydrogen Plasma Pretreatment in Improving Passivation of the Silicon Surface for Solar Cells Applications

Research On Silane Depletion Status During The Deposition Of Silicon Thin Films By High-Pressure Pecvd

Single-chamber Deposition of Intrinsic Microcrystalline Silicon Thin Film and Its Application in Solar Cells

Growth and Characterization of Boron-Doped na-Si:H Films Used as Window Layer Material of Solar Cells

Doped Microcrystalline Silicon Layers for Solar Cells by 13.56 Mhz Plasma-Enhanced Chemical Vapour Deposition

Key Issues for High-Efficiency Silicon Thin Film Solar Cells Prepared by RF-PECVD under High-Pressure-depletion Conditions

Fabrication and Optimization of Single-Junction Nc-Si:H N–i–p Solar Cells Using Si:H Phase Diagram Concepts Developed by Real Time Spectroscopic Ellipsometry

Advanced Deposition Phase Diagrams for Guiding Si:H-Based Multijunction Solar Cells

The microstructure of underdense hydrogenated amorphous silicon and its application to silicon heterojunction solar cells

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Development of aluminum-doped ZnO films for a-Si:H/μc-Si:H solar cell applications

Performance Optimization of P-I-n Type Microcrystalline Silicon Thin Films Solar Cells Deposited in Single Chamber