Abstract:Historically, the design of hybrid solar photovoltaic thermal (PVT) systems has focused on cooling crystalline silicon (c-Si)-based photovoltaic (PV) devices to avoid temperature-related losses. This approach neglects the associated performance losses in the thermal system and leads to a decrease in the overall exergy of the system. Consequently, this paper explores the use of hydrogenated amorphous silicon (a-Si:H) as an absorber material for PVT in an effort to maintain higher and more favourable operating temperatures for the thermal system. Amorphous silicon not only has a smaller temperature coefficient than c-Si, but also can display improved PV performance over extended periods of higher temperatures by annealing out defect states from the Staebler-Wronski effect. In order to determine the potential improvements in a-Si:H PV performance associated with increased thicknesses of the i-layers made possible by higher operating temperatures, a-Si:H PV cells were tested under 1 sun illumination (AM1.5) at temperatures of 25oC (STC), 50oC (representative PV operating conditions), and 90 oC (representative PVT operating conditions). PV cells with an i-layer thicknesses of 420, 630 and 840 nm were evaluated at each temperature. Results show that operating a-Si:H-based PV at 90 oC, with thicker i-layers than the cells currently used in commercial production, provided a greater power output compared to the thinner cells operating at either PV or PVT operating temperatures. These results indicate that incorporating a-Si:H as the absorber material in a PVT system can improve the thermal performance, while simultaneously improving the electrical performance of a-Si:H-based PV.

High Pressure Processing of Hydrogenated Amorphous Silicon Solar Cells: Relation Between Nanostructure and High Open-Circuit Voltage

High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

Improving the Performance of Crystalline Si Solar Cell by High-Pressure Hydrogenation*

Fabrication of High Voltage GaAs Micro-Solar Cell Arrays

Wide Bandgap P-Type Nanocrystalline Silicon Oxide As Window Layer for High Performance Thin-Film Silicon Multi-Junction Solar Cells

The microstructure of underdense hydrogenated amorphous silicon and its application to silicon heterojunction solar cells

Thin heterojunction a-Si:H photovoltaic cell design with no doped a-Si:H layers

The Effect of Hybrid Photovoltaic Thermal Device Operating Conditions on Intrinsic Layer Thickness Optimization of Hydrogenated Amorphous Silicon Solar Cells

Key Issues for High-Efficiency Silicon Thin Film Solar Cells Prepared by RF-PECVD under High-Pressure-depletion Conditions

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

Toward Efficiency Limits of Crystalline Silicon Solar Cells: Recent Progress in High‐Efficiency Silicon Heterojunction Solar Cells

Factors Affecting the Performance of HJT Silicon Solar Cells in the Intrinsic and Emitter Layers: A Review

Light management in hydrogenated amorphous silicon germanium solar cells

Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells

High efficiency and stable hydrogenated amorphous silicon radial junction solar cells built on VLS-grown silicon nanowires

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

Development of Highly Stable Hydrogenated Amorphous Silicon Films for Application in Solar Cells

High-efficiency Multicrystalline Silicon Solar Cells using Standard High-temperature, Float-zoned Cell Processing

Nanocrystalline‐silicon hole contact layers enabling efficiency improvement of silicon heterojunction solar cells: Impact of nanostructure evolution on solar cell performance

Improvement in Performance of Hydrogenated Amorphous Silicon Solar Cells with Hydrogenated Intrinsic Amorphous Silicon Oxide P/i Buffer Layers

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells