Abstract:Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is that during high - temperature processes, the quality of surface passivation provided by the amorphous silicon (a - Si:H) layer deteriorates, which limits the temperature range of subsequent process steps, for example, forcing the use of low - temperature silver pastes. The authors investigated the possibility of using an intrinsic amorphous silicon carbide (a - SiC_x:H) passivation layer to bypass this problem. Specifically, they evaluated the passivation effect of using the a - SiC_x:H layer in stacked structures of different carbon contents and doped amorphous silicon layers, and tested the stability of these structures during the annealing process. ### Main problems: 1. **Effect of high - temperature processes on passivation quality**: The passivation quality of the amorphous silicon (a - Si:H) layer decreases after high - temperature processes, limiting the temperature range of subsequent process steps. 2. **Search for alternative materials**: Explore the use of amorphous silicon carbide (a - SiC_x:H) as a passivation layer to improve high - temperature stability. ### Solutions: - **Material selection**: Use a - SiC_x:H layers with different carbon contents. - **Experimental design**: Evaluate the passivation effect of a - SiC_x:H layers with different carbon contents at different annealing temperatures. - **Performance testing**: Measure the open - circuit voltage (Voc), fill factor (FF) and short - circuit current density (Jsc), and analyze their changes with the annealing temperature. ### Experimental results: - **Passivation effect**: The a - SiC_x:H layer shows a better passivation effect than the a - Si:H layer at annealing temperatures above 300 °C. - **Open - circuit voltage**: The open - circuit voltage of complete solar cells using the a - SiC_x:H passivation layer exceeds 700 mV. - **Thermal stability**: The stability of the open - circuit voltage of the a - SiC_x:H layer after annealing is improved. - **Carrier transport**: The transport of electrons and holes at the hetero - interface was studied, and it was found that the transport of holes is better than that of electrons. - **Transparency**: Due to slightly higher transparency, the performance of complete solar cells using the a - SiC_x:H passivation layer is slightly better than that of the standard a - Si:H layer before annealing. ### Conclusion: By using the a - SiC_x:H layer as a passivation layer, the performance and stability of solar cells after high - temperature processes can be significantly improved, especially in terms of open - circuit voltage and thermal stability. This provides new possibilities for the development of more efficient crystalline silicon - based heterojunction solar cells.

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