Abstract:Liquid silanes can be used for low-cost, fast deposition of hydrogenated amorphous silicon (a-Si:H) as an alternative to state-of-the-art deposition processes such as plasma enhanced chemical vapor deposition or electron beam evaporation. However, liquid silane deposition techniques are still in their infancy. In this paper, we present a new version of the atmospheric pressure chemical vapor deposition technique designed to improve the reproducibility of a-Si:H deposition. With this new tool, we explore ways to improve the quality of the material. The films can be prepared using pure trisilane as a precursor; frequently, however, the trisilane is diluted with cyclooctane for better handling and process control. Currently, the influence of this dilution on the film quality is not well understood. In our work, we investigate and compare both precursor strategies. This paper presents a comprehensive analysis of the effects of cyclooctane dilution, deposition temperature, process duration, and precursor amount on the structure stoichiometry and electronic properties of the resulting films. The analysis was performed using a range of techniques, including Fourier transform infrared spectroscopy, electronic spin resonance spectroscopy, ellipsometry, secondary ion mass spectrometry, and conductivity measurements. For films deposited with pure silane, we found a low oxygen (O) and carbon (C) impurity incorporation and an adjustable H content up to 10 %, resulting in a photosensitivity of up to 104. Dependent on the dilution and deposition temperature, the films deposited with cyclooctane dilution showed a various amount of C incorporation, culminating in an a-Si:H/a-SiC:H structure for high temperatures and dilutions. High purity a-Si:H films as a-Si:C:H films are promising for an application in solar cells and transistors either as an amorphous functional layer or as a precursor for recrystallization processes, e.g., in TOPCon solar cell technology.

High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

Confined high-pressure chemical deposition of hydrogenated amorphous silicon

High Pressure Processing of Hydrogenated Amorphous Silicon Solar Cells: Relation Between Nanostructure and High Open-Circuit Voltage

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Low Temperature and High Deposition Rate Fabricating A-Si:H Thin Films and Solar Cells

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

Kinetics of Silane Decomposition in High-Pressure Confined Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

Advanced atmospheric pressure CVD of a-Si:H using pure and cyclooctane-diluted trisilane as precursor

[The Influence of Deposition Pressure on the Properties of Hydrogenated Amorphous Silicon Thin Films].

High-Rate Deposition of Hydrogenated Amorphous-Silicon Using Microwave Plasma Chemical Vapor-Deposition Process

Improving the Performance of Crystalline Si Solar Cell by High-Pressure Hydrogenation*

High-Density Plasma-Enhanced Chemical Vapor Deposition Of Si-Based Materials For Solar Cell Applications

Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of Μm-Thick A-Si:H Films

Development of Highly Stable Hydrogenated Amorphous Silicon Films for Application in Solar Cells

The microstructure of underdense hydrogenated amorphous silicon and its application to silicon heterojunction solar cells

Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor deposition

Effects of Chamber Pressures on the Passivation Layer of Hydrogenated Nano-Crystalline Silicon Mixed-Phase Thin Film by Using Microwave Annealing

Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma