Influence of the Total Gas Flow Rate on High Rate Growth Microcrystalline Silicon Films and Solar Cells
Han Xiao-Yan,Huo Guo-Fu,Zhang Xiao-Dan,Wei Chang-Chun,Li Gui-Jun,Zhang De-Kun,Chen Xin-Liang,Sun Jian,Zhang Jian-Jun,Zhao Ying,Geng Xin-Hua
DOI: https://doi.org/10.1088/1674-1056/18/8/071
2009-01-01
Abstract:This paper reports that high-rate-deposition of microcrystalline silicon solar cells was performed by very-high-frequency plasma-enhanced chemical vapor deposition. These solar cells, whose intrinsic mu c-Si:H layers were prepared by using a different total gas flow rate (F-total), behave much differently in performance, although their intrinsic layers have similar crystalline volume fraction, opto-electronic proper-ties and a deposition rate of similar to 1.0 nm/s. The influence of F-total on the micro-structural properties was analyzed by Raman and Fourier transformed infrared measurements. The results showed that the vertical uniformity and the compact degree of mu c-Si:H thin films were improved with increasing F-total. The variation of the microstructure was regarded as the main reason for the difference of the J-V parameters. Combined with optical emission spectroscopy, we found that the gas temperature plays an important role in determining the microstructure of thin films. With F-total of 300 sccm, a conversion efficiency of 8.11% has been obtained for the intrinsic layer deposited at 8.5 angstrom/s (1 angstrom-0.1 nm).