Strong room temperature photoluminescence of a-SiNx:H films

Ruifeng Yue,Yan, Wang,Guohua Li,Xianbo Liao,Yongqian Wang,Hongwei Diao,GuangLin Kong
2000-01-01
Abstract:The room temperature photoluminescence (PL) of Si-rich a-SiNx(x<1.3) films, grown by plasma enhanced chemical vapor deposition has been studied. Only with x≥0.5 in a-SiNx:H films, can a strong room temperature PL be observed; and the PL energy and intensity increase with the increase of N content. Two distinctive mechanisms are found to account for the room temperature luminescence of the a-SiNx:H films with the threshold near x=0.8. For low x, the films show typical luminescence properties of a-Si:H, while for high x, the normalized luminescence bands are independent on temperature. The luminescence origin of the film is also discussed with a quantum well model in combination with percolation theory.
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