Abstract:The network disorder of the a-Si1-xCx∶H films with carbon concentration lower than 20 at.% has been studied with Raman spectroscopy and photoluminescence spectroscopy (PL).Two different laser irradiation wavelengths were employed to excite the materials,one with a wavelength of 647.1 nm and an energy close to the optical gap of the material,can penetrate fairly deep into the material,whereas the other with a wavelength of 488.0 nm and an energy higher than the optical gap,can be almost completely absorbed by the surface of the materials.The variations in penetration depth result in significant differences between Raman spectra and PL spectra.These results indicate that there exist high density defects in the layers close to the surface,and that the spatial fluctuation of the gap due to variation in bulk concentrations.The complex microstructures of the films are responsible for the marked red-shift and broadening of the frequency and width of the TO mode of the Raman spectra and a small blue-shift and broadening of the PL peak when the sample was excited with a high laser energy.These observations show that in the a-Si1-xCx∶H sample,irradiation energies may strongly affect the results of Raman spectroscopy and PL measurements because of the complexity of the microstructures of the films.

A Study on Strong Room Temperature Photoluminescence of A-Sinx : H Films

Strong room temperature photoluminescence of a-SiNx:H films

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

Microstructure and photoluminescence properties of as-deposited and annealed Si-rich a-Si1−xCx:H films

Strong Green Light Emission from Low-Temperature Grown A-Sinx:H Film after Different Oxidation Routes

Optical Properties of A-Si/a-sin_x Superlattices

High Temperature Annealing Behaviors of Luminescent SiO x ∶H Films

The Room-Temperature Visible Photoluminescence from Nanocrystalline Si in Si/Sinx Superlattices

Strong Blue Photoluminescence from As-Fabricated Amorphous-Si:H∕sio2 Multilayers

Room-Temperature Blue Luminescence of Thermally Oxidized Si1-X-Ygexcy Thin Films on Si (100) Substrates

Photoluminescence from A-Si : H/Sio2 Multilayers Fabricated Using in Situ Layer by Layer Plasma Oxidation

A detailed photoluminescence study of crystallized a-Si:H multiquantum-well structures

Study of Photoacoustic Spectra of Amorphous Semiconductor Superlattice Films

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Photoluminescence with Ultra-wide Spectrum from Radiative Defects in Si-rich SiNx

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

Photoluminescence of Tb3+-doped SiNx films with different Si concentrations

Photoluminescence Fatigue Effect in GD A-Si : H:O

A New Luminescent Defect State in Low Temperature Grown Amorphous SiNxOy Thin Films

Resonant Raman scattering of a-SiNx:H

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations