Abstract:Because of the precise control of film thickness, atomic layer deposition (ALD) offers significant advantages in fabricating high-quality superlattice films. For the first time, a SiNx/SiO2 superlattice with an ultrathin SiNx sublayer layer (1.5 nm) and a SiO2 barrier layer (3 nm) was successfully fabricated using plasma-enhanced ALD. Transmission electron microscopy (TEM) measurements demonstrate the maintenance of multilayer structures with smooth interfaces. Next, the annealing effect on the microstructural, optical, and chemical properties of these SiNx/SiO2 superlattice structures was thoroughly investigated. With increasing annealing temperature, X-ray reflection (XRR) and TEM measurements revealed consistent changes in interface, morphology, roughness, density, and thickness. After high-temperature annealing, Fourier-transform infrared spectroscopy (FTIR) measurements combined with X-ray photoelectron spectroscopy (XPS) measurements revealed significant reductions in Si–H-related defects and absorption bands. Photoluminescence (PL) was used to characterize the light emission property, and it was discovered that increasing the annealing temperature decreased the PL peak intensity at ∼550 and 900 nm. The silicon nanocrystals (Si–NCs)-related PL peak (∼900 nm) became dominant as the annealing temperature increased. The findings in this paper shed light on the annealing effect on the new superlattice material prepared via ALD. Improved PL properties of this type of superlattice are expected and can be obtained in future research by optimizing the ALD deposition process and annealing parameters.

Optical Properties of A-Si/a-sin_x Superlattices

Optical Properties of Amorphous Si/Sio2 Superlattice

Nonlinear Optical Properties of Si/SiNx Superlattice

Optical properties of Ge/Si quantum dot superlattices

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

The Room-Temperature Visible Photoluminescence from Nanocrystalline Si in Si/Sinx Superlattices

A Study on Strong Room Temperature Photoluminescence of A-Sinx : H Films

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Microstructure and photoluminescence properties of as-deposited and annealed Si-rich a-Si1−xCx:H films

Structure and Electronic Properties of SiO2/Si Multilayer Superlattices: Si K Edge and L3,2 Edge X-Ray Absorption Fine Structure Study

Superlattice Structures Based on Amorphous Carbon

Annealing effect on SiNx/SiO2 superlattice with ultrathin sublayer fabricated using plasma-enhanced atomic layer deposition

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

Study of the Rayleigh Acoustic Mode in A-Si:H/a-sinx:h Superlattices

Study of Photoacoustic Spectra of Amorphous Semiconductor Superlattice Films

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

Stable Electroluminescence and Its Mechanism in Laser Crystallized A-Si:H/a-sinx:h Superlattices

OBSERVATION OF SPECTRA BY RAMAN SCATTERING ON A-Si:H/a-sinx:h SUPERLATTICES