Abstract:In this paper, a numerical study of In x Ga1 − x N/Al y Ga1 − y N/GaN heterostructure is presented. The dependence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) sheet densities on variables, such as In x Ga1 − x N layer thickness and In content, and Al y Ga1 − y N barrier layer thickness and Al content, are systematically investigated. The effect of P-type doping in In x Ga1 − x N on 2DEG and 2DHG sheet densities in this heterostructure is also studied. It is shown that the strong reverse electric field in In x Ga1 − x N cap layer contributes to the depletion of 2DEG at the Al y Ga1- y N/GaN interface. When In x Ga1 − x N layer thickness and In content increases, 2DEG sheet density decreases significantly. P-type doping shows less influence on 2DEG compared to the polarization electric field in In x Ga1 − x N layer. In addition, there exist critical values for all the variables beyond which 2DHG appears at the interface of In x Ga1 − x N/Al y Ga1 − y N. Once 2DHG appears, it will prevent 2DEG from being further depleted. With proper design of Al y Ga1 − y N layer, the coexistence of 2DEG and 2DHG in In x Ga1 − x N/Al y Ga1 − y N/GaN structure can be avoided, showing that this structure has great potential in the fabrication of enhancement mode (E-mode) high electron mobility transistors.

PROGRESS IN TWO-DIMENSIONAL ELECTRON GAS IN GROUP-Ⅲ-NITRIDE HETEROSTRUCTURES

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer

Two-dimensional Electron and Hole Gases in InxGa1−xN/AlyGa1−yN/GaN Heterostructure for Enhancement Mode Operation

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Theoretical Study of Improved Two‐dimensional Electron Gas Density in AlGaN/GaN/AlGaN Double Heterostructure

Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures

Influence of relaxation on the two-dimensional electron-gas in Al xGa1-xN/GaN/AlyGa1-yN double heterostructure with compressively strained GaN layer

Two-dimensional electron gas characteristics of ferroelectric/GaN heterostructure

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

Progress in Group Ⅲ nitride semiconductor electronic devices*

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Progress in Group III Nitride Semiconductor Electronic Devices

Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers