Abstract:Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low sheet carrier densities. In contrast to the conventional designs, this Quantum Channel (QC) confinement is controlled by epilayer design and the polarization field and not by the electron sheet density. As a result, the breakdown field at low sheet carrier densities increases by approximately 36% or even more because the quantization leads to an effective increase in the energy gap. In addition, better confinement increases the electron mobility at low sheet carrier densities by approximately 50%. Another advantage is the possibility of increasing the aluminum molar fraction in the barrier layer because a very thin layer prevents material relaxation and the development of dislocation arrays. This makes the QC especially suitable for high-voltage, high-frequency, high-temperature, and radiation-hard applications.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to significantly improve the performance of gallium nitride (GaN) - based high - electron - mobility transistors (HEMTs) at low two - dimensional electron gas (2DEG) densities by designing a new type of quantum - channel high - electron - mobility transistor (Quantum Channel HEMT, QC - HEMT). Specifically, the paper focuses on the following aspects: 1. **Improving the breakdown electric field**: - Traditional HEMTs have a lower breakdown electric field at low 2DEG densities. By reducing the GaN channel thickness to be close to or less than the Bohr radius (\(a_B = 2.14 \text{ nm}\)), a stronger quantum confinement effect can be achieved. This increases the breakdown electric field by approximately 36% or more at low 2DEG densities. This is because the quantization effect leads to an increase in the effective bandgap. 2. **Improving electron mobility**: - The stronger quantum confinement effect increases the electron mobility by about 50% at low 2DEG densities. This is because better confinement reduces scattering, thereby increasing mobility. 3. **Increasing the aluminum component**: - The molar fraction of aluminum in the barrier layer can be increased because a very thin layer can prevent material relaxation and the development of dislocation arrays. This makes QC - HEMT particularly suitable for high - voltage, high - frequency, high - temperature, and radiation - resistant applications. ### Formula Explanation - **Ground - state energy \(E_0\)**: The ground - state energy can be calculated by the following formula: \[ E_0=\left(\frac{\hbar^2}{2m}\right)^{1/3}\left(\frac{3\pi^2 n_q + 3/4}{q F_{\text{eff}}}\right)^{2/3} \] where \(n_q\) is the quantum number (for the ground state \(n_q = 0\)), and \(F_{\text{eff}}\) is the effective electric field in the channel. - **Effective electric field \(F_{\text{eff}}\)**: For traditional HEMTs, the effective electric field is approximately: \[ F_{\text{eff}}\approx\frac{F_i}{2}=\frac{q n_s}{2\epsilon_0\epsilon} \] where \(F_i\) is the electric field at the barrier - channel interface, \(n_s\) is the 2DEG density in the channel, \(\epsilon_0\) is the vacuum permittivity, and \(\epsilon = 8.9\) is the dielectric constant of GaN. For QC - HEMT, the effective electric field is approximately: \[ F_{\text{eff}}\approx F_s+\frac{F_i}{2} \] where \(F_s\) is the polarization field, which depends on the molar fraction of the cladding material and the QC thickness. ### Summary By introducing the quantum - channel design, the paper shows how to significantly improve the performance of GaN - based HEMTs in extreme environments, especially under low 2DEG density conditions. This design not only improves the breakdown electric field and electron mobility but also enhances the radiation resistance of the material, and is suitable for high - voltage, high - frequency, and high - temperature applications.

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