Abstract:We present the detailed dc and radio-frequency characteristics of an $\hbox{Al}_{0.3}\hbox{Ga}_{0.7}\hbox{N/GaN/In}_{0.1}\hbox{Ga}_{0.9}\hbox{N/GaN}$ double-heterojunction HEMT (DH-HEMT) structure. This structure incorporates a thin (3 nm) $\hbox{In}_{0.1}\hbox{Ga}_{0.9}\hbox{N}$ notch layer inserted at a location that is 6-nm away from the AlGaN/GaN heterointerface. The $\hbox{In}_{0.1}\hbox{Ga}_{0.9}\hbox{N}$ layer provides a unique piezoelectric polarization field which results in a higher potential barrier at the backside of the two-dimensional electron gas channel, effectively improving the carrier confinement and then reducing the buffer leakage. Both depletion-mode (D-mode) and enhancement-mode (E-mode) devices were fabricated on this new structure. Compared with the baseline AlGaN/GaN HEMTs, the DH-HEMT shows lower drain leakage current. The gate leakage current is also found to be reduced, owing to an improved surface morphology in InGaN-incorporated epitaxial structures. DC and small- and large-signal microwave characteristics, together with the linearity performances, have been investigated. The channel transit delay time analysis also revealed that there was a minor channel in the InGaN layer in which the electrons exhibited a mobility slightly lower than the GaN channel. The E-mode DH-HEMTs were also fabricated using our recently developed $\hbox{CF}_{4}$-based plasma treatment technique. The large-signal operation of the E-mode GaN-based HEMTs was reported for the first time. At 2 GHz, a $\hbox{1} \times \hbox{100}\ \mu\hbox{m}$ E-mode device demonstrated a maximum output power of 3.12 W/mm and a power-added efficiency of 49% with single-polarity biases (a gate bias of $+$0.5 V and a drain bias of 35 V). An output third-order interception point of 34.7 dBm was obtained in the E-mode HEMTs.

Quantum Channel AlGaN/GaN/AlGaN High Electron Mobility Transistor

Quantum Channel Extreme Bandgap AlGaN HEMT

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures

Engineering the (in, Al, Ga)N Back-Barrier to Achieve High Channel-Conductivity for Extremely Scaled Channel-Thicknesses in N-Polar Gan High-Electron-Mobility-Transistors

AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade

Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity

DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Use of a bilayer lattice-matched AlInGaN barrier for improving the channel carrier confinement of enhancement-mode AlInGaN/GaN hetero-structure field-effect transistors

Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in RF/Microwave Applications

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐free AlGaN/GaN Heterostructures

Optimized Transport Properties of GaN MISHEMTs with Thin AlN Interlayer

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer