Impact of Short Channel Effects on Detection of Terahertz Radiation in Silicon Nanowire MOSFETs

Guangjin Ma,Guoqing Hu,Chunlai Li,Ying Yu,Zhiping Zhou,Jin He

DOI: https://doi.org/10.1364/acpc.2017.su2a.157

2017-01-01

Abstract:Characteristic especially geometrical parameters have been investigated for the detection of terahertz radiation by plasma waves in silicon nanowire MOSFETs. Results will guide towards optimum design of a terahertz detector.

What problem does this paper attempt to address?

Terahert Detection Analysis Of Nanowire Gated Field Effect Transistor

Yu Chen,Jin He,Xuehao Mu,Haijun Lou,Lining Zhang,Yan Song

DOI: https://doi.org/10.1109/EDSSC.2008.4760659

2008-01-01

Abstract:An analytical terahertz (THz) detection model of the Silicon nanowire MOSFET (NWFET) is developed in this paper. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport are obtained. Under the reasonable boundary, an analytical model of the photoresponse of the NWFET is derived out. The comparison between analytical calculation and numerical results confirmed the proposed model. Moreover, the plasma wave transport behavior in the NWFET is analyzed in detail from the presented model and some significant characteristics are demonstrated.
Terahertz wave generation and detection analysis of silicon nanowire MOS field-effect transistor

Chen Yu,He Jin,Wang Yinglei,Lin Xinnan,Zhang Lining,Chan Mansun

DOI: https://doi.org/10.4103/0256-4602.57828

2014-01-01

IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India)

Abstract:A complete analysis of Terahertz (THz) wave generation and detection of Silicon Nanowire MOS Field-Effect Transistor (SNFET) is presented in this paper. Based on the developed SNFET-THz device theory, the dependence of THz detection of SNFET on bias and structure parameters are obtained and illustrated. The numerical technique to solve fluid dynamic equation groups, which govern the THz wave transport in SNFET, is also introduced. Based on the developed numerical tool, the THz generation and its instability are demonstrated and analyzed in details. From developed numerical simulation program, the evolution processes of THz plasma wave in generation and detection modes are presented. © 2009 by the IETE.
An analytical terahertz detection theory for Silicon-based nanowire MOS field effect transistor

Yu Chen,Jin He,Xuehong Mu,Haijun Lou,Lining Zhang,Yan Song,Zhifeng Yang,Jinxuan Zhu,Juncheng Cao

DOI: https://doi.org/10.1166/jctn.2009.1281

2009-01-01

Journal of Computational and Theoretical Nanoscience

Abstract:An analytical terahertz (THz) detection theory for the Silicon-based nanowire MOS field effect transistor (SNWFET) is developed in this paper. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport are obtained. Under the reasonable boundary, an analytical model of the photoresponse of the SNWFET is derived out. The comparison between analytical calculation and numerical results confirmed the proposed model. Moreover, the plasma wave transport behavior in the SNWFET is analyzed in detail from the presented model and some significant characteristics are demonstrated. Copyright © 2009 American Scientific Publishers All rights reserved.
Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Hei Wong,Qanqun Yu,Shurong Dong,Kuniyuki Kakushima,Hiroshi Iwai

DOI: https://doi.org/10.1016/j.sse.2017.07.005

IF: 1.916

2017-01-01

Solid-State Electronics

Abstract:This work reports the observations of different geometry and temperature dependencies of electrical characteristics of silicon nanowire transistors with gate length of a couple microns. Several abnormal characteristics degradations were observed. As the gate lengths as well as the source/drain doping level of the devices under investigation were well beyond the punchthrough conditions, these observed characteristic degradations should not be due to conventional short-channel effects. We ascribed these observations to the charge transport along the corners/boundaries of the nanowires. Current enhancements were observed because of the higher mobility and larger density of states at the corners where the surface states have opposite effects on these parameters. Temperature dependence of the threshold voltage shows a linear decrease as the temperature increases. This trend is ascribed to the charge states at oxide/nanowire interfaces. Corners and surfaces of nanowire thus should play an important role for ultra-short nanowire transistors and that calls for shape of nanowire optimization for device design.
An analytic model of silicon-based nanowire gated field effect transistor terahertz signal detection

Yan Song,Yu Chen,Xuehao Mu,Haijun Lou,Lining Zhang,Jin He

2009-01-01

Abstract:An analytical terahertz (THz) signal detection model of the Silicon-based nanowire MOSFET (NWFET) is developed in this paper. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport are obtained. Under the reasonable boundary, an analytical model of the photoresponse of the NWFET is derived out. The comparison between analytical calculation and numerical results confirmed the proposed model. Moreover, the plasma wave transport behavior in the NWFET is analyzed in detail from the presented model and some significant characteristics are demonstrated.
Monte Carlo Investigation of Silicon MOSFET for Terahertz Detection

Juncheng Wang,Gang Du,Xiaoyan Liu

DOI: https://doi.org/10.1109/sispad.2015.7292296

2015-01-01

Abstract:In this paper, the terahertz (THz) detection based on Silicon MOSFET is investigated with two-dimensional (2D) ensemble Monte Carlo (MC) simulation study. The analytical model of responsivity to high frequency small signals based on the small-signal equivalent circuit of MOSFETs operating in terahertz detection mode are developed and calibrated. We explore the impacts of input excitation signals with different frequency and amplitude on THz detection. Moreover, it is shown that the responsivity to THz excitations could be controlled by modulation of the gate voltage and the gate length in the MOSFET.
Terahertz wave generation and detection analysis of nanowire gated field effect transistor

Yu Chen,Jin He,Xuehao Mou,Yinglei Wang,Lining Zhang,Yan Song,Mansun Chan

DOI: https://doi.org/10.1117/12.820510

2009-01-01

Abstract:A complete analysis of terahertz(THZ) wave generation and detection of silicon nanowire gated field effect transistor (SNFET) is presented in this paper. Based on the developed SNFET THZ device theory, the dependence of THZ detection of SNFET on bias and structure parameters are obtained and illustrated. The THZ generation condition and various unique characteristics are also demonstrated and analyzed in details. The numerical skills utilized in this paper are also described. Based on the developed numerical tool, the evolution processes of plasma wave in generation and detection mode are also presented. © 2009 SPIE.
An Analytical Model for Terahertz Detection in Cylindrical Surrounding-Gate MOSFETs

Guangjin Ma,Chunlai Li,Xiaojuan Ma,Zhiping Zhou,Jin He

DOI: https://doi.org/10.1063/1.5043450

IF: 1.697

2018-01-01

AIP Advances

Abstract:An analytical model for detection of terahertz radiation by plasma wave in cylindrical surrounding-gate (SRG) MOSFETs is presented. In comparison with traditional drain-current models, the rectification response of terahertz signal due to current self-mixing in conducting channel is considered by solving coupled plasma fluid equations using perturbation method. The resulted model is for the first time dipicting detector response in above threshold, near threshold and subthreshold regimes by a single expression valid for both resonant and nonresonant detection schemes. As no fitting parameters is adopted, the model is physical and predicative. Model validity has been extensively verified through numerically solving differential equations with a wide range of incident wave frequencies, channel doping concentrations, device working temperatures, SRG MOSFET geometry parameters as well as incident wave amplitudes. Model applicability to large input terahertz signal has also been discussed. The presented model is convenient for finding the optimum detector design from a multiparameter space. Its great universality will make it a candidate compact model for future terahertz integrated circuit simulation.
Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared

Mahdi Asgari,Leonardo Viti,Valentina Zannier,Lucia Sorba,Miriam Serena Vitiello

DOI: https://doi.org/10.3390/nano11123378

2021-12-13

Abstract:Engineering detection dynamics in nanoscale receivers that operate in the far infrared (frequencies in the range 0.1-10 THz) is a challenging task that, however, can open intriguing perspectives for targeted applications in quantum science, biomedicine, space science, tomography, security, process and quality control. Here, we exploited InAs nanowires (NWs) to engineer antenna-coupled THz photodetectors that operated as efficient bolometers or photo thermoelectric receivers at room temperature. We controlled the core detection mechanism by design, through the different architectures of an on-chip resonant antenna, or dynamically, by varying the NW carrier density through electrostatic gating. Noise equivalent powers as low as 670 pWHz-1/2 with 1 µs response time at 2.8 THz were reached.
TCAD Simulation of Gate-Enclosed MOSFET for Terahertz Detector

Yingjie Zhu,Xiaoli Ji,Yiming Liao,Fuwei Wu,Feng Yan

DOI: https://doi.org/10.1109/icsict.2014.7021683

2014-01-01

Abstract:The source parasitic capacitor significantly influences the terahertz responsivity for CMOS terahertz detector. In this paper, the gate-enclosed MOSFET is used for terahertz signal detection in order to reduce the source parasitic capacitor. 3D-TCAD simulation reveals that the gate-enclosed structure improves the voltage responsivity (Rv) of the THz detectors and reduces noise-equivalent power (NEP) effectively by comparing with the equal conventional MOSFET detectors. A maximum Rv of 3 kV/W and a minimum NEP of 42pW/√Hz are achieved for the gate-enclosed nMOSFETs implemented in 0.18μm CMOS technology.
The Effect of Infrared Plasmon on the Performance of Si-based THz Detectors

He Zhu,Jintao Xu,Jiaqi Zhu,Miao Wang,Huizhen Wu,Ning Li,Ning Dai

DOI: https://doi.org/10.1007/s10854-016-5598-7

2016-01-01

Journal of Materials Science Materials in Electronics

Abstract:Plasmons in metals have great impact on light emission, propagation, and detection in visible and infrared light wave frequencies. To explore plasmonic effect on the THz detection, both a backside-illuminated and a topside-illuminated blocking impurity band (BIB) THz detectors are developed and significant influence of plasmonic effect on the performance of BIB THz detectors is observed. The plasmonic effect in the heavily doped semiconductor layer of BIB THz detectors causes high reflectance of THz radiation which curtails the detection frequencies of the backside-illuminated BIB detectors. However, due to the advantages of flip-chip package and high quantum efficiency, the dark current, the responsivity, and the detectivity of the backside-illuminated detector shows superior characteristics to the topside-illuminated detector. The performance of the THz detector could be further improved with the suppression of the plasmonic effect.
Performance Enhancement of CMOS Terahertz Detector by Drain Current

Xingxing Zhang,Xiaoli Ji,Yiming Liao,Jingyu Peng,Chenxin Zhu,Feng Yan

DOI: https://doi.org/10.1088/1674-1056/26/9/098401

2017-01-01

Chinese Physics B

Abstract:In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.
Numerical Study on Heterodyne Terahertz Detection in Field Effect Transistor

Zhifeng Yan,Jingxuan Zhu,Yinglei Wang,Xinnan Lin,Jin He,Juncheng Cao

DOI: https://doi.org/10.1364/oe.18.007782

IF: 3.8

2010-01-01

Optics Express

Abstract:Numerical method on the heterodyne terahertz detection characteristics of field effect characteristics of field effect transistors is studied in this paper which is based on the hydrodynamic equations which govern the terahertz signal transport in field effect transistors (FETs). A modification is made in an existed numerical tool established by our group by coupling the heterodyne characteristics. This modified numerical tool work well in all operation regions of FETs from sub-threshold to strong inversion and from linear to saturation. And the results are used to demonstrate the potential for using MOS transistors as THz detectors and investigate the optimization of the device structure.
The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector

Yingdong Wei,Chenyu Yao,Li Han,Libo Zhang,Zhiqingzi Chen,Lin Wang,Wei Lu,Xiaoshuang Chen

DOI: https://doi.org/10.3390/s23125367

IF: 3.9

2023-06-06

Sensors

Abstract:Studying the nonlinear photoresponse of different materials, including III-V semiconductors, two-dimensional materials and many others, is attracting burgeoning interest in the terahertz (THz) field. Especially, developing field-effect transistor (FET)-based THz detectors with preferred nonlinear plasma-wave mechanisms in terms of high sensitivity, compactness and low cost is a high priority for advancing performance imaging or communication systems in daily life. However, as THz detectors continue to shrink in size, the impact of the hot-electron effect on device performance is impossible to ignore, and the physical process of THz conversion remains elusive. To reveal the underlying microscopic mechanisms, we have implemented drift-diffusion/hydrodynamic models via a self-consistent finite-element solution to understand the dynamics of carriers at the channel and the device structure dependence. By considering the hot-electron effect and doping dependence in our model, the competitive behavior between the nonlinear rectification and hot electron-induced photothermoelectric effect is clearly presented, and it is found that the optimized source doping concentrations can be utilized to reduce the hot-electron effect on the devices. Our results not only provide guidance for further device optimization but can also be extended to other novel electronic systems for studying THz nonlinear rectification.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

Eva A. A. Pogna,Mahdi Asgari,Valentina Zannier,Lucia Sorba,Leonardo Viti,Miriam S. Vitiello

DOI: https://doi.org/10.1038/s41377-020-00425-1

2020-11-19

Light: Science and Applications

Abstract:Abstract Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (<1 nW Hz − 1/2 ) and high responsivities (>100 V/W). Nano-engineering an NW photodetector combining high sensitivity with high speed (sub-ns) in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics, but this requires a clear understanding of the origin of the photo-response. Conventional electrical and optical measurements, however, cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetry that allows different processes to be simultaneously activated. Here, we innovatively capture snapshots of the photo-response of individual InAs nanowires via high spatial resolution (35 nm) THz photocurrent nanoscopy. By coupling a THz quantum cascade laser to scattering-type scanning near-field optical microscopy (s-SNOM) and monitoring both electrical and optical readouts, we simultaneously measure transport and scattering properties. The spatially resolved electric response provides unambiguous signatures of photo-thermoelectric and bolometric currents whose interplay is discussed as a function of photon density and material doping, therefore providing a route to engineer photo-responses by design.
Arbitrarily Polarized CMOS Terahertz Detector with Silicon-Based Plasmonic Antenna

Yiming Liao,Ke Wang,Jingyu Peng,Yaozu Guo,Feng Yan,Xiaoli Ji

DOI: https://doi.org/10.1109/cstic49141.2020.9282395

2020-01-01

Abstract:In this paper, we demonstrate the idea to combine silicon-based plasmonic antennas with MOSFETs to form an arbitrarily polarized terahertz (THz) detector based on standard CMOS technology. For an optimized detector with a size of 162 μm × 161 μm, the simulation results show that the field response to the vertical polarized wave has a radio of 0.91 with 90 degree delay compared to the response to the horizontal polarized wave at 0.25 THz. The proposed arbitrarily polarized on chip detector occupies a small area size, which offers a novel approach to THz array imaging and sensing.
Design and Measurement of CMOS Terahertz Thermal Detector with Gate-antenna and NMOS Transistors

Li Zi-meng,Yang Jiao,Chen Fei

DOI: https://doi.org/10.3788/gzxb20194802.0223001

2019-01-01

Abstract:A structure of thermal terahertz detector working at room temperature was proposed. The detector is consisted of an on-chip antenna and a temperature sensor. The antenna made of gates of the temperature sensor absorbs incident terahertz wave and converts it to Joule heat. The heat-generated temperature rise is then detected by the temperature sensor. The working flow of the detection can be divided into three parts: electromagnetic absorption, thermal-heat conversion and thermal-electrical conversion. Modeling and simulation of every process are presented. The simulated Antenna absorptivity is 0.897, the heat transfer efficiency is 165 K/W and the thermoelectric conversion efficiency is 1.77 mV/W. The detector is designed based on 0.18 mu m CMOS technology with post-process thinning the silicon substrate to 300 mu m. Its simulated voltage responsivity is 262 mV/W at 3 THz frequency, while the tested value is 148.83 mV/W under the incident power of 1mW.
Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors

Miriam S Vitiello,Dominique Coquillat,Leonardo Viti,Daniele Ercolani,Frederic Teppe,Alessandro Pitanti,Fabio Beltram,Lucia Sorba,Wojciech Knap,Alessandro Tredicucci

DOI: https://doi.org/10.1021/nl2030486

2012-01-11

Abstract:The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor configuration. In order to take advantage of the low effective mass and high mobilities achievable in III-V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source-drain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the output in the form of a DC drain voltage. Significant responsivity values (>1 V/W) at 0.3 THz have been obtained with noise equivalent powers (NEP) < 2 × 10(-9) W/(Hz)(1/2) at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multipixel arrays, make these devices highly competitive as a future solution for terahertz detection.
Investigation of terahertz plasma oscillations in nano-scaled double-gate MOSFETs by Monte Carlo method

Juncheng Wang,Gang Du,Xiaoyan Liu

DOI: https://doi.org/10.1109/ICSICT.2014.7021315

2014-01-01

Abstract:In this paper, we investigate the terahertz plasma oscillations in nano-scaled double-gate n-type Silicon MOSFET with 2D ensemble Monte Carlo simulation method. The effects of the drain-to-source biases, gate-to-source biases and doping levels in the source/drain regions of the devices on the terahertz plasma oscillations are considered. The relation between terahertz plasma oscillations and the channel scaling in double-gate MOSFET is also discussed. The oscillation frequency peak value as a function of doping levels exhibits a good agreement with the predictions of 2D plasma frequency.
A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process

Yaxuan Liu,Xin Zhang,Jingye Sun,Ling Tong,Lingbing Kong,Tao Deng

DOI: https://doi.org/10.3390/ma15196578

2022-09-22

Abstract:This paper reports a novel, one-dimensional dense array of asymmetrical metal-oxide-semiconductor field-effect-transistor (MOSFET) THz detector, which has been fabricated in GlobalFoundries 55-nm CMOS technology. Compared with other technologies, the Si-based complementary metal-oxide-semiconductor (CMOS) dominates in industrial applications, owing to its easier integration and lower cost. However, as the frequency increases, the return loss between the antenna and detector will increase. The proposed THz detector has a short-period grating structure formed by MOSFET fingers in the array, which can serve as an effective antenna to couple incident THz radiation into the FET channels. It not only solved the problem of return loss effectively, but also greatly reduced the detector area. Meanwhile, since the THz signal is rectified at both the source and drain electrodes to generate two current signals with equal amplitude but opposite directions, the source drain voltage is not provided to reduce the power consumption. This leads to a poor performance of the THz detector. Therefore, by using an asymmetric structure for the gate fingers position to replace the source drain voltage, the performance of the detector in the case of zero power consumption can be effectively improved. Compared with the symmetrical MOSFET THz detector, Rv is increased by 183.3% and NEP is decreased by 67.7%.

Impact of Short Channel Effects on Detection of Terahertz Radiation in Silicon Nanowire MOSFETs

Terahert Detection Analysis Of Nanowire Gated Field Effect Transistor

Terahertz wave generation and detection analysis of silicon nanowire MOS field-effect transistor

An analytical terahertz detection theory for Silicon-based nanowire MOS field effect transistor

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

An analytic model of silicon-based nanowire gated field effect transistor terahertz signal detection

Monte Carlo Investigation of Silicon MOSFET for Terahertz Detection

Terahertz wave generation and detection analysis of nanowire gated field effect transistor

An Analytical Model for Terahertz Detection in Cylindrical Surrounding-Gate MOSFETs

Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared

TCAD Simulation of Gate-Enclosed MOSFET for Terahertz Detector

The Effect of Infrared Plasmon on the Performance of Si-based THz Detectors

Performance Enhancement of CMOS Terahertz Detector by Drain Current

Numerical Study on Heterodyne Terahertz Detection in Field Effect Transistor

The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector

Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

Arbitrarily Polarized CMOS Terahertz Detector with Silicon-Based Plasmonic Antenna

Design and Measurement of CMOS Terahertz Thermal Detector with Gate-antenna and NMOS Transistors

Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors

Investigation of terahertz plasma oscillations in nano-scaled double-gate MOSFETs by Monte Carlo method

A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process