Abstract:As field effect transistors are reduced to nanometer dimensions, experimental and theoretical research has shown a gradual change in noise generation mechanisms. There are few studies on noise theory for small nanoscale transistors, and Monte Carlo (MC) simulations mainly focus on 2D devices with larger nanoscale dimensions. In this study, we employed MC simulation techniques to establish a 3D device simulation process. By setting device parameters and writing simulation programs, we simulated the raw data of channel current noise for a silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET) with a 10 nm channel length and calculated the drain output current based on these data, thereby achieving static testing of the simulated device. Additionally, this study obtained a 3D potential distribution map of the device channel surface area. Based on the original data from the simulation analysis, this study further calculated the power spectral density of the channel current noise and analyzed how the channel current noise varies with gate voltage, source-drain voltage, temperature, and substrate doping density. The results indicate that under low-temperature conditions, the channel current noise of the 10 nm MOSFET is primarily composed of suppressed shot noise, with the proportion of thermal noise in the total noise slightly increasing as temperature rises. Under normal operating conditions, the channel current noise characteristics of the 10 nm MOSFET device are jointly characterized by suppressed shot noise, thermal noise, and cross-correlated noise. Among these noise components, shot noise is the main source of noise, and its suppression degree decreases as the bias voltage is reduced. These findings are consistent with experimental observations and theoretical analyses found in the existing literature.

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Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Monte Carlo Investigation of Silicon MOSFET for Terahertz Detection

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Investigation of Gate Current in Nano-Scale Mosfets by Monte Carlo Solution of Quantum Boltzmann Equation

Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Computational investigation of velocity overshoot effects in double gate MOSFETs

Investigating scattering effects in nano-scale double gate MOSFETs by using direct solution of the Boltzmann transport equation and Poisson-Schrodinger equation method

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Analysis of 3D Channel Current Noise in Small Nanoscale MOSFETs Using Monte Carlo Simulation

Non-stationary transports in sub-100nm UTB mosfet by using QBE based Monte Carlo method

Quantum modeling for nanoscale double gate MOSFETs based on Green's function

Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET

Two-dimensional quantum effects in “ultimate” nanoscale metal-oxide-semiconductor field-effect transistors

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Monte Carlo Simulation of P- and N-Channel GOI MOSFETs by Solving the Quantum Boltzmann Equation

A Unified Charge Model Comprising Both 2D Quantum Mechanical Effects in Channels and in Poly-Silicon Gates of MOSFETs

Device Simulation of Nano-Scale MOSFETs Based on Bandstructure Calculation

Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB Method