Abstract:Field-effect transistors coupled to integrated antennas (TeraFETs) are photodetectors being actively developed for the THz frequency range ($\sim$ 100 GHz - 10 THz). Among them, Graphene TeraFETs (G-TeraFETs) have demonstrated distinctive photoresponse features compared to those made from elementary semiconductors. For instance, previous studies have shown that G-TeraFETs exhibit a THz response that comprises two components: the resistive self-mixing (RSM) and photothermoelectric effect (PTE). The RSM and PTE arise from carrier density oscillations and carrier heating, respectively. In this work, we confirm that the photoresponse can be considered a combination of RSM and PTE, with PTE being the dominant rectification mechanism at higher frequencies. For our CVD G-TeraFETs with asymmetric antenna coupling, the PTE response dominates over the RSM at frequencies above 100 GHz. We find that relative contribution of RSM and PTE to the photoresponse is strongly frequency dependent. Electromagnetic wave simulations show that this behavior is due to the relative change in the total dissipated power between the gated and ungated channel regions of the G-TeraFET as the frequency increases. The simulations also indicate that the channel length over which the PTE contributes to the photoresponse below the gate electrode is approximately the same as the electronic cooling length. Finally, we identify a PTE contribution that can be attributed to the contact doping effect in graphene close to the metal contacts. Our detectors achieve a minimum optical noise-equivalent power of 101 (114) pW/$\sqrt{Hz}$ for asymmetric (symmetric) THz antenna coupling conditions at 400 GHz. This work demonstrates how the PTE response can be used to optimize the THz responsivity of G-TeraFETs.

Comparison of Large Area and Lumped Element Field-Effect Transistors for Broadband Detection of Terahertz

Broadband THz Detection from 01 to 22 THz with Large Area Field-Effect Transistors

Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors

Broadband Terahertz Detection with an Antenna Coupled Zero-Bias Field-Effect Transistor

Symmetry Effects in Broadband, Room-Temperature Field Effect Transistor THz Detectors

Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/ $\sqrt{\text{Hz}}$ at 0.6 THz

Investigation of Parasitic Coupling of THz Radiation to a Large Area Field-Effect Transistor

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors

Ultrabroadband and Multiband Infrared/terahertz Photodetectors with High Sensitivity

Broadband Thz Detection and Homodyne Mixing Using Gaas High-Electron-Mobility Transistor Rectifiers

Helmholtz-Zentrum Dresden-Rossendorf (HZDR) Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz

Modeling of antenna-coupled Si MOSFETs in the Terahertz Frequency Range

A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process

Influence of Coupled Structural Parameters of Photoconductive Antennas on the Terahertz Narrowband Detection Performance of High Sensitivity and Frequency Selection

On-Chip Integration of a Plasmonic FET Source and a Nano-Patch Antenna for Efficient Terahertz Wave Radiation

Numerical Study on Heterodyne Terahertz Detection in Field Effect Transistor

Terahertz detection with graphene FETs: photothermoelectric and resistive self-mixing contributions to the detector response

A High-Performance Terahertz Detector Based on a Graded Channel GaN High-Electron-mobility Transistor with a Recessed Gate

Coherent Terahertz Radiation Detection: Direct Comparison Between Free-Space Electro-Optic Sampling and Antenna Detection

Resonant THz detection by periodic multi-gate plasmonic FETs