Abstract:Terahertz (THz) technology has developed vigorously and demonstrated a wide range of application prospects in various fields, ranging from biomedical and deep space exploration to wireless communications and nondestructive detection. Therefore, the room temperature (RT) sensitive low-power THz detectors are of great technical significance for the development of THz technology. Two-dimensional materials as the superior candidates for next-generation electronics and optoelectronics integrated devices are drawing increasing attention for their unique confined structure and abundant properties. Especially, construction of heterojunction is an alternative method for improving the photoelectric performance of the detectors. Herein, we have demonstrated self-driven and ultra-sensitive RT THz photodetector based on asymmetrically contacted Graphene-Ta2NiSe5 van der Waals heterojunction. Surprisingly, the proposed self-driven THz photodetector is superb with an ultra-fast photoresponse (720 ns), a high responsivity (24.2 mA/W and 18.2 mA/W), and a low noise equivalent power (41 nW/Hz0.5 and 55 nW/Hz0.5) at 0.12 THz and 0.30 THz, respectively. More importantly, the detector achieves high-resolution THz imaging at RT, and the performances of the devices are significantly improved by applying a small bias voltage (100 mV). Our results present the feasibility for realizing superior RT THz detection and exhibit promising prospects in analytical applications, ultrafast sensing and security monitoring.

Room Temperature Terahertz Detection by Rectifying Field Effect Transistors

Broadband THz Detection from 01 to 22 THz with Large Area Field-Effect Transistors

Symmetry Effects in Broadband, Room-Temperature Field Effect Transistor THz Detectors

Broadband Thz Detection and Homodyne Mixing Using Gaas High-Electron-Mobility Transistor Rectifiers

Ultrafast voltage-tunable detectors for Terahertz radiation operating above 100K

Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors

Ultra-fast Transistor-Based Detectors for Precise Timing of Near Infrared and THz Signals.

High Sensitivity of Room-Temperature Terahertz Photodetector Based on Silicon.

Ultrabroadband and Multiband Infrared/terahertz Photodetectors with High Sensitivity

Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors

THz detection with epitaxial graphene field effect transistors on silicon carbide

Ultrasensitive Room-Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator

Helmholtz-Zentrum Dresden-Rossendorf (HZDR) Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz

Sensing Infrared Photons at Room Temperature: from Bulk Materials to Atomic Layers

Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As$_x$P$_{1-x}$ gate layer

Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors

Self-driven and Ultrasensitive Room-Temperature Terahertz Photodetector Based on Graphene-Ta2nise5 Van Der Waals Heterojunction

Hemispherical lens integrated room temperature ultra-broadband GaAs HEMT terahertz detector

A terahertz detector operating at room temperature

High intensity study of THz detectors based on field effect transistors

Room-temperature MoTe 2 /InSb heterostructure large-area terahertz detector