Abstract:Silicon, as one of the most essential semiconducting materials, is widely applied in various photodetection applications due to its high portability, convenient preparation, and compatibility with conventional complementary metal–oxide–semiconductor technology. Nowadays, black silicon, prepared by enforcing ultrafast laser micro-structuring and hyperdoping techniques, has received considerable attention for developing next-generation silicon photonics and silicon optoelectronics devices. In this work, high-comprehensive-property black silicon photodetectors with broadband spectral responsivity and high gain were achieved by femtosecond laser irradiation and titanium hyperdoping. The proposed device can respond to the incident light from 400 nm to at least 1550 nm, demonstrating a high responsivity of 40.59 A/W for 950 nm under the application of −5 V bias, and the corresponding detectivity can reach 3.61 × 10 12 cm·Hz 1/2 W −1 . Moreover, the fabricated photodetector exhibits a stable sub-bandgap photocurrent at 1550 nm, with an average responsivity of 3.42 mA/W by applying a −5 V bias. These improvements were achieved by the hyperdoping of titanium in silicon, which shows deep impurity levels, low electroactivity, and increased effective carrier lifetimes, as well as the formation of shallow n-i heterojunction and trapping centers induced by the femtosecond laser irradiation. Our work provides significant insights into the applications of black silicon in various optical-related fields, including weak and infrared photon detection, silicon photonic chips, remote sensing, and large-scale optoelectronic integration.

High infrared responsivity of silicon photodetector with titanium-hyperdoping

Broadband-Spectral-Responsivity of black silicon photodetector with high gain and sub-bandgap sensitivity by titanium hyperdoping

Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdoping

Visible-blind Short-Wavelength Infrared Photodetector with High Responsivity Based on Hyperdoped Silicon

Hyperdoped Crystalline Silicon for Infrared Photodetectors by Pulsed Laser Melting: A Review

Extended infrared responses in Er/O-hyperdoped Si at room temperature

High-responsivity graphene/hyperdoped-silicon heterostructure infrared photodetectors

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Record-Breaking-High-Responsivity Silicon Photodetector at Infrared 1.31 and 1.55 Μm by Argon Doping Technique

Ultra-broadband and High Response of the Bi2Te3-Si Heterojunction and Its Application As a Photodetector at Room Temperature in Harsh Working Environments.

Nanosecond laser annealing processed surface-structured hyperdoped silicon for efficient near-infrared detection

Extrinsic Photodetector Based on Co-Hyperdoped Black Silicon

Highly Sensitive Narrowband Si Photodetector With Peak Response at Around 1060 nm

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Long infrared detector based on Se-hyperdoped black silicon

Zinc-hyperdoped silicon photodetectors fabricated by femtosecond laser with sub-bandgap photoresponse

Silicon: quantum dot photovoltage triodes

Peak Response Wavelength Tunable 4H-Sic UV Detector Covering Near-Ultraviolet Region with High-Temperature Stability and Radiation Hardness

High-performance Broadband Photoresponse of Self-Powered Mg2Si/Si Photodetectors

Achieving High-Responsivity Near-Infrared Detection at Room Temperature by Nano-Schottky Junction Arrays Via a Black Silicon/platinum Contact Approach

A Highly Sensitive Filterless Narrowband 4H-Sic Photodetector Employing a Charge Narrowing Strategy