Zinc-hyperdoped silicon photodetectors fabricated by femtosecond laser with sub-bandgap photoresponse

Jiawei Fu,Jingkun Cong,Li Cheng,Deren Yang,Xuegong Yu
DOI: https://doi.org/10.1088/1361-6641/ac9e15
IF: 2.048
2022-11-02
Semiconductor Science and Technology
Abstract:Developing a low-cost, room-temperature operated and complementary metal-oxide-semiconductor (CMOS) compatible near infrared silicon photodetector is of interest for creating all-silicon optoelectronic integrated circuits. However, a silicon-based photodetector usually cannot respond to infrared light with wavelengths longer than 1100 nm, due to the bandgap (1.12 eV) limitation of silicon. Here, we present a zinc-hyperdoped silicon (Si:Zn)-based photodetector that exhibits an enhanced sub-bandgap photoresponse. The zinc-hyperdoped silicon shows a broadband infrared absorption over 50%, with a zinc concentration reaches 4.66×1019 cm-3 near the surface. The
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
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