Record-Breaking-High-Responsivity Silicon Photodetector at Infrared 1.31 and 1.55 Μm by Argon Doping Technique

Chao Li,Ji-Hong Zhao,Xiao-Hang Liu,Zhe-Yi Ren,Yang,Zhan-Guo Chen,Qi-Dai Chen,Hong-Bo Sun

DOI: https://doi.org/10.1109/ted.2023.3261823

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:The introduction of intermediate band (IB) into the bandgap of silicon (Si) is an efficient way to enhance light absorption of Si in the short-wave infrared region. In this article, we report inert element argon (Ar)hyperdoped Si (similar to 10(21) cm(-3)) materials and photodetectors by double-doping technique of ion-implantation followed by pulsed laser doping. The pulsed laser irradiation after ion implantation process can not only serve as postannealing to improve the crystalline quality of ion-implanted layer, but also be used for re-hyperdoping of Ar atoms to enhance the infrared absorptance (similar to 20% at 1.31 mu m) of Ar-hyperdoped Si. The n(+)-n-junction based on the build-in carrier concentration difference between Ar-hyperdoped layer and Si substrate shows perfect rectification characteristics. The Ar-hyperdoped Si double-contacts photodiodes show the responsivity of 0.975 A/W for 1.31 mu m and 1.28 A/W for 1.55 mu m at 12-V reverse bias, respectively. To the best of our knowledge, they are the record-breaking performances for bulk Si photodetector at these subbandgap wavelengths working at a mild voltage. This work demonstrates the potential application of inert element-hyperdoped Si in the field of infrared photodetection.