Shallow-Mesa InP Avalanche Photodiode with Ultralow Dark Current

Jingchang Zhang,Yaru Han,Bing Xiong,Yi Luo,Changzheng Sun,Lai Wang,Jian Wang,Yanjun Han,Zhibiao Hao,Hongtao Li,Jiadong Yu

DOI: https://doi.org/10.1364/cleo_at.2020.jth2d.18

2020-01-01

Abstract:A shallow-mesa InP avalanche photodiode is proposed and fabricated by a simple dry etching process. The device exhibits a remarkably low dark current of 4 pA at unit gain and a high gain of 320.

What problem does this paper attempt to address?

Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

S. J. Maddox,W. Sun,Z. Lu,H. P. Nair,J. C. Campbell,S. R. Bank

DOI: https://doi.org/10.1063/1.4757424

IF: 4

2012-01-01

Applied Physics Letters

Abstract:We reduced the room temperature dark current in an InAs avalanche photodiode by increasing the p-type contact doping, resulting in an increased energetic barrier to minority electron injection into the p-region, which is a significant source of dark current at room temperature. In addition, by improving the molecular beam epitaxy growth conditions, we reduced the background doping concentration and realized depletion widths as wide as 5 μm at reverse biases as low as 1.5 V. These improvements culminated in low-noise InAs avalanche photodiodes exhibiting a room temperature multiplication gain of ∼80, at a record low reverse bias of 12 V.
Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process

Tiancai Wang,Hongling Peng,Peng Cao,Qiandong Zhuang,Jie Deng,Jian Chen,Wanhua Zheng

DOI: https://doi.org/10.3390/s24020640

IF: 3.9

2024-01-20

Sensors

Abstract:Since the avalanche phenomenon was first found in bulk materials, avalanche photodiodes (APDs) have been exclusively investigated. Among the many devices that have been developed, silicon APDs stand out because of their low cost, performance stability, and compatibility with CMOS. However, the increasing industrial needs pose challenges for the fabrication cycle time and fabrication cost. In this work, we proposed an improved fabrication process for ultra-deep mesa-structured silicon APDs for photodetection in the visible and near-infrared wavelengths with improved performance and reduced costs. The improved process reduced the complexity through significantly reduced photolithography steps, e.g., half of the steps of the existing process. Additionally, single ion implantation was performed under low energy (lower than 30 keV) to further reduce the fabrication costs. Based on the improved ultra-concise process, a deep-mesa silicon APD with a 140 V breakdown voltage was obtained. The device exhibited a low capacitance of 500 fF, the measured rise time was 2.7 ns, and the reverse bias voltage was 55 V. Moreover, a high responsivity of 103 A/W@870 nm at 120 V was achieved, as well as a low dark current of 1 nA at punch-through voltage and a maximum gain exceeding 1000.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
Photodiode with Low Dark Current Built in Silicon-on-Insulator by Electrostatic Doping

J. Liu,X. Y. Cao,A. Zaslavsky,S. Cristoloveanu,J. Wan

DOI: https://doi.org/10.1016/j.sse.2019.107733

IF: 1.916

2019-01-01

Solid-State Electronics

Abstract:In this paper, we demonstrate experimentally a novel SOI-based photodiode using electrostatic doping and fabricated in a simple, low-cost process. Unlike a conventional ion-implanted pn junction diode, the electrostatically doped devices feature extremely low reverse-bias current. When used for photodetection, our devices exhibit a dark current three decades lower than a conventional photodiode and provide excellent detectivity even under low optical power density. Our electrostatically-doped diodes also feature enhanced response in the near-UV and 1/f low-frequency noise.
Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

Tianyi Li,Xiaoqiang Tao,Weizong Xu,Dong Zhou,Fangfang Ren,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

DOI: https://doi.org/10.1109/LPT.2023.3276907

IF: 2.6

2023-01-01

IEEE Photonics Technology Letters

Abstract:In this work, a 4H-SiC n-i-p avalanche photodiode (APD) with n-layer formed by N ion implantation is demonstrated, in which recessed-window structure is used as termination for reducing electrical field crowding effect around the device edge. The APD with 20 mu m diameter active region exhibits low dark current of similar to 5 pA, high gain of 10(6), zero-bias peak quantum efficiency of 53.8 % at 265 nm. Two-dimensional avalanche photocurrent mapping indicates that uniform gain is realized across the device central region while edge-located premature breakdown is effectively suppressed. Since there is no shading effect of top contact metal, close to 100% percent of fill factor is achieved in the multiplication region. The APD can operate in Geiger mode by using a passive quenching circuit. A room temperature single photon detection capability is obtained at 280 nm, when the dark count rate is similar to 28.8 Hz/mu m(2).
Vertical 4H-Sic N-I-p-n APDs with Partial Trench Isolation

Xiaolong Cai,Lianghui Li,Hai Lu,Dong Zhou,Weizong Xu,Dunjun Chen,Fangfang Ren,Rong Zhang,Youdou Zheng,Guanglei Li

DOI: https://doi.org/10.1109/lpt.2018.2817881

IF: 2.6

2018-01-01

IEEE Photonics Technology Letters

Abstract:In this letter, in order to improve avalanche characteristics in deep ultraviolet range and enhance fill factor, vertical 4H-SiC n-i-p-n avalanche photodiodes (APDs) are designed and fabricated, in which avalanche current flows through a forwardbiased p-n junction formed between the p epi-layer and the n-type substrate. Compared with a traditional n-i-p APD, no obvious difference of gain-voltage and photo-response characteristics is observed, indicating the feasibility of the proposed n-i-p-n device structure. When a partial trench isolation scheme is applied, the vertical n-i-p-n APD shows a high fill factor of 78.3% and a low-bias quantum efficiency of 66%.
High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

Hang Xu,Yafen Yang,Jingjing Tan,Lin Chen,Hao Zhu,Qingqing Sun

DOI: https://doi.org/10.1109/led.2022.3173593

IF: 4.8157

2022-01-01

IEEE Electron Device Letters

Abstract:In this work, a silicon-on-insulator (SOI)-based lateral avalanche photodiode (APD) is proposed and fabricated. The device features lateral separate-absorption-multiplication (SAM) and electron-only injection. The bandwidth is optimized with the effective blocking of the deep photogenerated carriers by SOI structure. The device stability is also improved by additional shallow P-well region near the N + -region which can eliminate the edge breakdown induced by the curvature effect. Simulation results demonstrate that avalanche region (high electric field zone) is confined at the lateral PN + junction. Experimental fabrication and characterizations are further realized, and this SOI-based lateral APD device exhibits high responsivity (1.92 A/W at 7.8 V for 300 nm), low dark current (below 5 V), large bandwidth (12.4 GHz at 8.2 V), and low breakdown voltage (~7.8 V). The demonstrated device performance as well as the simple structure and good process compatibility can be attractive in future photo-detecting and advanced sensing applications.
Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors

LI Guang-ru,QIN Zhi-xin,SANG Li-wen,SHEN Bo,ZHANG Guo-yi

DOI: https://doi.org/10.3788/fgxb20113203.0262

2011-01-01

Abstract:p-i-n GaN based avalanche UV photodetectors were fabricated and characterized. Dark current of the device is as low as 0.05 nA at the reverse bias of 5 V and ＜0.5 nA at 20 V. Repeatable photocurrent avalanche gain, began at around 80 V and grew up to a peak of 120 at about 85 V, demonstrating a good material quality. C-V mea-surement was used to determine carrier distribution and depletion information, and it showed that p-layer fully depleted at reverse bias of about 15 V, resulting in a hole concentration of 1.9×10^17 cm^(-3). The relative low hole concentration might lead to a weak confinement of electrical field and an increase in the operating voltage of the device. Photocurrent spectroscopy under various bias was also measured and exhibited obvious Franz-Keldysh effect.
4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency

Xiaolong Cai,Dong Zhou,Sen Yang,Hai Lu,Dunjun Chen,Fangfang Ren,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1109/jphot.2016.2614499

IF: 2.4

2016-01-01

IEEE Photonics Journal

Abstract:In this paper, a high-performance 4H-SiC separated absorption charge multiplication ultraviolet avalanche photodiode (APD) with low breakdown voltage is designed and fabricated. The room temperature dark current of the APD remains at 0.1 pA level ( 29 pA/ cm-2) when reverse bias is below 50 V and then rises by several orders of magnitude before avalanche breakdown occurs. An avalanche gain up to 106 is achieved at 67 V. Based on secondary ion mass spectroscopy measurement, the electric field distribution within the as-fabricated APD is numerically simulated. The ionization ratio of Al in the p-type charge control layer is estimated to be 40%. The frequency dispersion phenomenon in capacitance-voltage (C-V) measurement should be caused by structural defects existing within the APDs, which may also be the source of the enhanced dark current before avalanche breakdown. The room-temperature maximum quantum efficiency is 80% at 270 nm with an ultraviolet (UV)/visible rejection ratio more than 104.
Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window

Zhiyu Xu,Theeradetch Detchprohm,Shyh-Chiang Shen,A. Nepomuk Otte,Russell D. Dupuis

DOI: https://doi.org/10.1109/ted.2024.3393932

IF: 3.1

2024-05-25

IEEE Transactions on Electron Devices

Abstract:This work reports high-performance homojunction gallium nitride (GaN) p-i-n (PIN) avalanche photodiodes (APDs) grown on a low-defect GaN substrate and fabricated with an ~1.8° shallow-bevel-mesa edge termination. High-quality p-i-n GaN epitaxial layers were grown using metalorganic chemical vapor deposition (MOCVD), and the device edge termination was achieved by multistep pseudo gray-scale lithography followed by photoresist reflow and dry etching of the bevel mesa. Fabricated GaN APDs showed an ultralow dark current density A/cm2 in the low-mid reverse bias voltage region prior to avalanche breakdown and achieved a current-limited photocurrent gain of under deep-ultraviolet (DUV) illumination at nm and a reverse bias −107 V. The total current density without illumination was in the order of A/cm2 at the onset of avalanche breakdown. The avalanche breakdown characteristic was confirmed by temperature-dependent J–V studies, with a derived positive temperature coefficient of 0.02 V/K for the breakdown voltage (BV). The analysis of the temperature-dependent reverse-bias characteristics indicated that the reverse leakage current components before avalanche could be attributed to trap-assisted tunneling (TAT) and phonon-assisted tunneling (PAT) processes.

engineering, electrical & electronic,physics, applied
A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

Daoqun Liu,Tingting Li,Bo Tang,Peng Zhang,Wenwu Wang,Manwen Liu,Zhihua Li

DOI: https://doi.org/10.3390/mi13010047

IF: 3.4

2021-12-29

Micromachines

Abstract:Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and fabricated by standard 0.5 μm complementary metal oxide semiconductor (CMOS) technology. The proposed structure eliminates the requirements for wafer-thinning and the double-side metallization process by most commercial Si APD products. The fabricated device shows very low level dark current of several tens Picoamperes and ultra-high multiplication gain of ~4600 at near-infrared wavelength. The ultra-low extracted temperature coefficient of the breakdown voltage is 0.077 V/K. The high performance provides a promising solution for near-infrared weak light detection.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode

Afshan Khaliq,Xinyi Zhou,Hong-Yu Chai,Munir Ali,Hao Wu,Oussama Gassab,Hong Liu,Duo Xiao,Xiao-Guang Yang,Sichao Du

DOI: https://doi.org/10.1109/access.2024.3383836

IF: 3.9

2024-04-16

IEEE Access

Abstract:This work presents a novel InGaAs/InP avalanche photodiode, fabricated in the separate absorption, grading, charge, and multiplication configuration operated at non-cryogenic conditions under low-frequency ramp gating. An optimized three stage InP multiplication layer of thickness offers an extended linear mode operation by reducing the punch-through voltage, and indefinitely increasing the avalanche threshold voltage. A large background dark current is observed following steady, and linear multiplication in approximately direct relationship with the ramp gating. For 1310 nm short-wave infrared, normal incidence pulsed illumination at instant-to-peak voltage ratios of , a sort of negative differential resistance is incorporated into the device in a qualitative sense, owing to the illumination induced switching/variations in the intrinsic values of electron, and hole avalanche coefficients in the multiplication region. Under fixed illumination, an interesting deduction from the transient photo response is the slow quenching phenomenon prolonging for all the electrical field establishments in the device. The related measurement scheme paves the way for futuristic ramp-driven InGaAs/InP APDs for detecting SWIR wavelengths under required low power consumption environments.

computer science, information systems,telecommunications,engineering, electrical & electronic
High-performance HgCdTe avalanche photodetector enabled with suppression of band-to-band tunneling effect in mid-wavelength infrared

Jin Chen,Jian Chen,Xin Li,Jiale He,Liao Yang,Jian Wang,Feilong Yu,Zengyue Zhao,Chuan Shen,Huijun Guo,Guanhai Li,Xiaoshuang Chen,Wei Lu

DOI: https://doi.org/10.1038/s41535-021-00409-3

IF: 6.856

2021-12-01

npj Quantum Materials

Abstract:Abstract HgCdTe avalanche photodiodes promise various fascinating applications due to the outstanding capability of detecting weak signals or even single photon. However, the underlying transport mechanisms of diverse dark current components are still unresolved at high reverse bias, thus limiting the development of high-performance devices. Here, we establish an accurate model to demonstrate the competitive mechanism between band-to-band and avalanche dark currents in positive-intrinsic-negative structures. Based on the high consistency between the simulated and measured results, we find that both components jointly dominate overall dark current but with a larger avalanche current. This breaks the conventional cognition that band-to-band dark current contributes the majority. With the guidance, we reconstruct an optimized device and achieve gain 1876 (6153) and dark current 10 −10 (10 −9 ) A at bias −10 (−10.5) V, respectively. Comparisons of dark current and gain with reported single-element devices further confirm the outstanding performance of our device.

materials science, multidisciplinary,physics, applied, condensed matter,quantum science & technology
4H-Sic P-I-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation

Sen Yang,Dong Zhou,Hai Lu,Dunjun Chen,Fangfang Ren,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1109/lpt.2016.2535335

IF: 2.6

2016-01-01

IEEE Photonics Technology Letters

Abstract:In this letter, we report the first demonstration of a 4H-SiC p-i-n ultraviolet (UV) avalanche photodiode (APD) with its p-layer formed by Al implantation. In order to alleviate the electric field crowding around mesa edge, an appropriately doped p sub-layer with high lateral resistance is added beneath the top p+ contact layer, which are both formed by Al implantation into a lightly doped n-SiC layer. The room temperature (RT) dark current of the APD remains lower than 0.1 pA when reverse bias is <;200 V, and then increases by several orders of magnitude before avalanche breakdown occurs at ~260 V. A maximum avalanche gain larger than 103 can be achieved, while the related breakdown voltage exhibits a positive temperature coefficient of ~25 mV/°C. The activation energy of dark current as well as the relationship between the dark current and the device active area is studied, which suggests that bulk leakage assisted by residual implantation-induced deep-level defects is the dominant source of dark current at high bias. The RT maximum quantum efficiency of the APD under 0 V bias is 44.4% at 270 nm with a UV/visible rejection ratio larger than 104.
High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity

Hao Han,Yicheng Zhu,Zilu Guo,Zhifeng Li,Huidan Qu,Wantian Gao,Ding Wang,Wenjuan Wang

DOI: https://doi.org/10.1007/s11082-021-02915-x

IF: 3

2021-06-01

Optical and Quantum Electronics

Abstract:Reducing the dark current of InGaAs/InP avalanche photodiodes (APDs) is an important way to improve its performance. Decreasing the active size can reduce the dark current but sacrifice the quantum efficiency. In this paper, the metal–insulator-metal (MIM) microcavity is integrated with an APD, which can converge light from tens of micrometers to several micrometers, so as to compensate for the loss of detection efficiency caused by the reduction of the size of the APD. Through photoelectric joint simulation, the optical response of the device can be obtained, and the coupling effect between the MIM structure and the APD can be analyzed directly. The simulation results show that the photocurrent to the dark current ratio of the APD integrated with the MIM microcavity is twice of the MIM free traditional APD, and the 3 dB bandwidth reaches 5.8 GHz. When the MIM microcavity is applied to an APD array, the optical crosstalk between pixels is found to be negligible.

engineering, electrical & electronic,optics,quantum science & technology
Low breakdown voltage and CMOS compatible avalanche photodiode based on SOI substrate

Hang Xu,Tianyang Feng,Jianbin Guo,Yafen Yang,David Wei Zhang

DOI: https://doi.org/10.1364/ol.528915

IF: 3.6

2024-07-25

Optics Letters

Abstract:Hang Xu, Tianyang Feng, Jianbin Guo, Yafen Yang, David Wei Zhang In this work, we present a novel, to the best of our knowledge, lateral avalanche photodiode (APD) with low breakdown voltage and high ... [Opt. Lett. 49, 4310-4313 (2024)]

optics
High-Performance Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Ultra-Shallow Bevel Edge Terminations

Haifan You,Haiping Wang,Weike Luo,Yiwang Wang,Xinghua Liu,Hai Lu,Rong Zhang,Youdou Zheng,Dunjun Chen

DOI: https://doi.org/10.1109/led.2024.3375803

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:We report high-performance Al0.1Ga0.9N p-i-n ultraviolet (UV) avalanche photodiodes (APDs) based on sapphire substrates with the employment of negative bevel edge terminations. An ultra-low slope angle of 2 degrees was achieved through the optimization of photoresist reflow and inductively coupled plasma (ICP) etching processes. The devices present stable breakdown voltages (V-BR) around 115.9 V, low dark current densities (J(BR)) below 5 x 10(-4) A/cm(2) and a record-high avalanche gain over 7 x 10(6). The electroluminescence (EL) during the avalanche multiplication process assembles in the device center, which is in good agreement with the TCAD simulations, indicating that the electric field crowding effect along the device periphery is significantly suppressed. Additionally, the tapered sidewall profile ameliorates the UV absorption loss in the p-GaN layer and leads to a high external quantum efficiency (EQE) of 29.74% under zero bias. Finally, through the exponential fitting of the dark current density versus the electric field strength, variable-range hopping (VRH) conduction is found to be the dominant leakage mechanism for Al0.1Ga0.9N APDs for the first time.
Characteristics of Thin InAlAs Digital Alloy Avalanche Photodiodes.

Wenyang Wang,Jinshan Yao,Jingyi Wang,Zhuo Deng,Zhiyang Xie,Jian Huang,Hong Lu,Baile Chen

DOI: https://doi.org/10.1364/ol.435025

2021-01-01

Abstract:InP-based avalanche photodiodes (APDs) are widely used in short-wave infrared (SWIR) communications. In this work, a thin (200 nm nominal) InAlAs digital alloy layer consisting of two monolayer (ML) InAs and two ML AlAs was grown on InP substrate and investigated in detail. APDs with p-i-n and n-i-p structures were fabricated and characterized. The current-voltage, capacitance-voltage characteristics, and excess noise were measured at room temperature with different laser wavelengths, and the measured effective k value (ratio of impact ionization coefficients) is about 0.15 with the multiplication gain up to 12. The randomly-generated path length (RPL) model was carried out to analyze the dead space effect. Our thin digital alloy successfully reduced excess noise compared with conventional In0.52Al0.48As random alloy without introducing new elements and shows the potential for high-speed, low noise APD applications.
Plasmonic Resonance-Enhanced Low Dark Current and High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode

Bojian Zhang,Yingjian Liu,Kai Jiang,Fangli Wang,Muyi Yang,Songpo Guo,Zhengfu Han,Liang Wang

DOI: https://doi.org/10.1021/acsaelm.2c01052

IF: 4.494

2022-09-23

ACS Applied Electronic Materials

Abstract:High-speed and high-efficiency photodiodes are especially beneficial for exponential data communication traffic growth. However, improving high responsivity while maintaining low dark current and high bandwidth remains a challenge for vertical detector design. This study proposes a plasmonic InP/InGaAs uni-traveling-carrier photodiode with optical antenna arrays, which exhibits a low dark current of 2.52 nA at a −3 V bias voltage, a high bandwidth of over 40 GHz, and a high responsivity of 0.12 A/W. The absorption efficiency of the photodiode shows 2-fold improvement using plasmonic resonance generated by nanodisks at 1550 nm. This work designs a low dark current and high-bandwidth photodiode with improved responsivity, which provides a potential method for high-speed vertical photodiode design.

materials science, multidisciplinary,engineering, electrical & electronic
High Fill-Factor 4H-Sic Avalanche Photodiodes with Partial Trench Isolation

Lianghui Li,Dong Zhou,Fei Liu,Hai Lu,Fangfang Ren,Dunjun Chen,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1109/lpt.2016.2602320

IF: 2.6

2016-01-01

IEEE Photonics Technology Letters

Abstract:In this letter, a beveled mesa 4H-SiC ultraviolet (UV) avalanche photodiode (APD) with partial trench isolation is reported. By adopting this partial trench isolation structure, when device diameter of the APD is 150 mu m, its fill factor can increase from 33.9% to 63.5% compared with the traditional full trench isolation structure. The photocurrent of the APD shows corresponding improvement when illuminated with the same UV light source. Through current-voltage, spectral response, and single photon detection characterizations, it is proved that the performance of the partial trench isolation APD does not degrade compared with the traditional full trench isolation structure. The APD fabricated in this letter with partial trench isolation shows a unity-gain peak quantum efficiency of 66.4% at 270 nm and a single photon detection efficiency of 9.5% at 280 nm when the dark count rate is fixed at 1 Hz/mu m(2).
Back-Illuminated Separate Absorption And Multiplication Algan Solar-Blind Avalanche Photodiodes

Youran Huang,Dunjun Chen,Huanjun Lu,KeXiu Dong,Rong Zhang,Youdou Zheng,Liben Li,Zhonghui Li

DOI: https://doi.org/10.1063/1.4772984

IF: 4

2012-01-01

Applied Physics Letters

Abstract:This letter reports the fabrication and performance of back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes. Devices with a 60-mu m-diameter active area and a double-mesa structure exhibit a low dark current density of 1.06 x 10(-8) A/cm(2) at the reverse bias of 20 V and a maximum multiplication gain up to 3000 at the reverse bias of 91 V. The temperature dependence of avalanche voltage shows a large positive temperature coefficient of 0.05 V/K, confirming that avalanche multiplication is the dominant gain mechanism in the photodiodes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772984]

Shallow-Mesa InP Avalanche Photodiode with Ultralow Dark Current

Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process

Photodiode with Low Dark Current Built in Silicon-on-Insulator by Electrostatic Doping

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

Vertical 4H-Sic N-I-p-n APDs with Partial Trench Isolation

High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors

4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency

Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode

High-performance HgCdTe avalanche photodetector enabled with suppression of band-to-band tunneling effect in mid-wavelength infrared

4H-Sic P-I-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation

High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity

Low breakdown voltage and CMOS compatible avalanche photodiode based on SOI substrate

High-Performance Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Ultra-Shallow Bevel Edge Terminations

Characteristics of Thin InAlAs Digital Alloy Avalanche Photodiodes.

Plasmonic Resonance-Enhanced Low Dark Current and High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode

High Fill-Factor 4H-Sic Avalanche Photodiodes with Partial Trench Isolation

Back-Illuminated Separate Absorption And Multiplication Algan Solar-Blind Avalanche Photodiodes