Abstract:In this paper, 4H-SiC separated absorption charge and multiplication ultraviolet avalanche photodiodes (APDs) with small gain-voltage slope and enhanced fill factor are designed and fabricated. As a special reach-through structure, the absorption layer of the APD is fully depleted at breakdown voltage, which can share a considerable portion of reverse bias. As a result, the sensitivity of electric field within the multiplication layer as a function of overbias is reduced, leading to a small gain slope. Given the fact that the impact ionization coefficient of holes is less sensitive to electric field variation than that of electrons, the APD is also designed to be a hole-initiated ionization type, which can further reduce the gain slope. Meanwhile, three different top-electrode geometric patterns of SiC APDs are designed, and their impact on APD performance is investigated for the first time. Severe current crowding effect is observed in the forward current-voltage (I-V) characteristics of the APD with a traditional dot top-electrode, indicating inefficient current spreading across the top contact layer due to nonnegligible lateral resistance. In contrast, the forward I-V characteristics and photo-current at the avalanche regime of the APDs with optimized branch-shaped top-electrodes are apparently improved, owing to the improvement of electric field distribution and avalanche multiplication uniformity across the device active area. Furthermore, photon count rate increases by two to four times with larger voltage pulse height, suggesting enhanced effective avalanche multiplication area and fill factor.

Vertical 4H-Sic N-I-p-n APDs with Partial Trench Isolation

High Fill-Factor 4H-Sic Avalanche Photodiodes with Partial Trench Isolation

4H-Sic Ultraviolet Avalanche Photodiodes with Small Gain Slope and Enhanced Fill Factor

4H-Sic P-I-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

Avalanche Mechanism Analysis of 4H-Sic N-I-p and P-I-n Avalanche Photodiodes Working in Geiger Mode

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency

Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process

Spatial Non-Uniform Hot Carrier Luminescence from 4H-Sic P-I-n Avalanche Photodiodes

High-Performance Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Ultra-Shallow Bevel Edge Terminations

High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

128-pixel arrays of 4H-SiC UV APD with dual-frequency PECVD SiNx passivation

A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched Sic Single-Photon-Counting Avalanche Photodiodes

Performance Improvement of 4H-Sic PIN Ultraviolet Avalanche Photodiodes with Different Intrinsic Layer Thicknesses

4H-Sic Avalanche Photodiode with Multistep Junction Extension Termination

Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

Passive Quenching Electronics for Geiger Mode 4H-Sic Avalanche Photodiodes

Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window